All-in-one, bio-inspired, and low-power crypto engines for near-sensor security based on two-dimensional memtransistors

Abstract

In the emerging era of the internet of things (IoT), ubiquitous sensors continuously collect, consume, store, and communicate a huge volume of information which is becoming increasingly vulnerable to theft and misuse. Modern software cryptosystems require extensive computational infrastructure for implementing ciphering algorithms, making them difficult to be adopted by IoT edge sensors that operate with limited hardware resources and at low energy budgets. Here we propose and experimentally demonstrate an “all-in-one” 8 × 8 array of robust, low-power, and bio-inspired crypto engines monolithically integrated with IoT edge sensors based on two-dimensional (2D) memtransistors. Each engine comprises five 2D memtransistors to accomplish sensing and encoding functionalities. The ciphered information is shown to be secure from an eavesdropper with finite resources and access to deep neural networks. Our hardware platform consists of a total of 320 fully integrated monolayer MoS2-based memtransistors and consumes energy in the range of hundreds of picojoules and offers near-sensor security.

An All-in-One Bioinspired Neural Network

“…To fabricate the connections between the respective nodes of T SM , T EM1 , T EM2 , and T LM , the substrate was spin-coated with MMA and PMMA, the e-beam lithography and development processes previously described were used to define the connections , and e-beam evaporation was used to deposit 60 nm of Au. Finally, the e-beam resist was rinsed away by the same lift-off process mentioned previously. , …”

“…Next, the photoresist was removed to give access to the individual Pt electrodes. 29,48 Large Area Monolayer MoS 2 Film Growth. Monolayer MoS 2 was deposited on an epi-ready 2′′ c-sapphire substrate by metalorganic chemical vapor deposition (MOCVD).…”

Heterogeneous Integration of Atomically Thin Semiconductors for Non‐von Neumann CMOS

“…Also note that programmable 2D FETs or memtransistors can be used as artificial synapses for acceleration of various neural networks and brain-inspired computations as well as hardware security applications. [52][53][54][55][56][57][58]…”

Highly Linear and Symmetric Synaptic Memtransistors Based on Polarization Switching in Two‐Dimensional Ferroelectric Semiconductors

“…[14][15][16] In this respect, memtransistor has risen as an outstanding multiterminal memristive device to circumvent existing limitations in memristors. [17][18][19][20] As a hybrid form of memristor and transistor, memtransistor can realize nondestructive reading and fine gate-tunable memristive switching behaviors. Particularly, two-dimensional (2D) polycrystalline MoS 2 based memtransistors have been extensively studied for nonvolatile memory and artificial synapses applications.…”

“…Particularly, two-dimensional (2D) polycrystalline MoS 2 based memtransistors have been extensively studied for nonvolatile memory and artificial synapses applications. [18,[20][21][22][23] However, the resistive switching behaviors in reported memtransistors often relied on defects migration and/or charge trapping of randomly oriented grain boundaries, illustrating nonideal potentiation and depression synaptic profiles which could deteriorate the accuracy in neuromorphic computing. [24,25] Ferroelectric (FE) materials have been used as outstanding artificial analog synapses with highly linear and symmetry synaptic weight update, because of the programmable polarization switching.…”