A Binary Tunnel Field Effect Transistor with a Steep Sub-threshold Swing and Increased ON Current

Abstract

A variant tunnel field effect transistor structure called the binary tunnel field effect transistor (BTFET) for low voltage and near ideal switching characteristics is proposed. The BTFET relies on a binary tunneling distance (HIGH and LOW) for its operation to achieve a steep sub-threshold swing with a predicted range of 5 mV/dec. The transition of tunneling distance from HIGH to LOW state is a step-function of the gate voltage with the threshold voltage as a transition voltage. BTFET has a high on-current due to the high gate electric field and a large tunneling cross section area. An orientation dependent non-local band-to-band tunneling model was used to analyze the DC characteristics of the device.

Evanescent mode based compact modelling of a dual‐metal double‐gate tunnel field‐effect transistor

“…6 b , which indicates the encroachment of SCEs when device length is scaled down. It can also be predicted from the model that the OFF current of the device (including gate leakage current) follows the order of 10 −17 A/μm, which is of quite similar as has been reported in [18, 20–22]. In such context, the ON current, OFF current and sub‐threshold swing values found in the literature [18, 20–22] and from our proposed model of DG TFET device under specific bias conditions (OFF current corresponds to V gs = 0, V ds = 1 V and ON current corresponds to V gs = 1, V ds = 1 V) are compared in Table 2.…”

“…To get accuracy, our simulation result is calibrated with the reported data for dual‐metal DG TFET [18]. For better comparison, the total gate length of DG TFET is kept 50 nm, which is the same as considered in the reported works [18, 20–22]. In the simulation, we have correctly used field‐dependent mobility model, SRH and auger recombination model, bandgap narrowing, Kane and Kleysh's model for non‐local band‐to‐band tunnelling.…”

An Improved Si Tunnel Field Effect Transistor With a Buried Strained $\hbox{Si}_{1-x}\hbox{Ge}_{x}$ Source

“…Nevertheless, we have seen from our experimental results that the trends are correct. A similar structure has been simulated and showed promising results [18], [19]. The proposed device structure can be realized with standard technology, and it is currently under investigation.…”

Analytical modelling and device design optimisation of epitaxial layer‐based III–V tunnel FET

“…The reason behind considering TTFET is its lower ambipolar current in comparison to other epitaxial layer‐based vertical line TFET structures [5, 6]. Unlike conventional epitaxial layer‐based line tunnelling devices [7, 23, 24], TTFET shows a better saturation behaviour and allows an improvement in drain current without any increase in footprint area [22]. Therefore, a physics‐based analytical modelling of TTFET is carried out using Kane's model [25] to predict its current–voltage and surface potential characteristics.…”