2001 IEEE 32nd Annual Power Electronics Specialists Conference (IEEE Cat. No.01CH37230)
DOI: 10.1109/pesc.2001.954440
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A basic IGBT model with easy parameter extraction

Abstract: Simple parameter extraction is the goal of a new Basic IGBT model designed for use by application engineers. The model has good accuracy yet its parameters can be quickly extracted from three standard measurements or from data sheets.

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Cited by 39 publications
(20 citation statements)
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“…It is nowadays recognized that an extraction scheme is crucial in order to design power circuits easily through simulation [6,7,8,9]. Complex or inaccurate parameterization often discourages design engineers from attempting to use physics-based semiconductor models in their circuit designs.…”
Section: Parameter Extraction Proceduresmentioning
confidence: 99%
“…It is nowadays recognized that an extraction scheme is crucial in order to design power circuits easily through simulation [6,7,8,9]. Complex or inaccurate parameterization often discourages design engineers from attempting to use physics-based semiconductor models in their circuit designs.…”
Section: Parameter Extraction Proceduresmentioning
confidence: 99%
“…Note that the Kraus model is well-suited for lower power ranges (800A, 1.7kV). Furthermore, lumped charge modeling approach for MOSFETs, IGBTs and IGCTs has been introduced recently by Lauritzen [11,12] where the device vertical layer structure is discretized into several regions and where each region is described by the fundamental current continuity equations.…”
Section: Introductionmentioning
confidence: 99%
“…It is nowadays recognized that an identification procedure is crucial in order to design power circuits easily through simulation (Allard et al, 2003;Claudio et al, 2002;Kang et al, 2003c;Lauritzen et al, 2001). Complex or inaccurate parameterization often discourages design engineers from attempting to use physics-based semiconductor models in their circuit designs.…”
Section: Introductionmentioning
confidence: 99%
“…This issue is particularly relevant for IGBTs because they are characterized by a large number of parameters. Since IGBT models developed in recent years lack an identification procedure, different recent papers in literature address this issue (Allard et al, 2003;Claudio et al, 2002;Hefner & Bouche, 2000;Kang et al, 2003c;Lauritzen et al, 2001). Different approaches have been taken, most of them cumbersome to be solved since they are very complex and require so precise measurements that are not useful for usual needs of simulation.…”
Section: Introductionmentioning
confidence: 99%