A Baseband-Matching-Resistor Noise-Canceling Receiver With a Three-Stage Inverter-Only OpAmp for High In-Band IIP3 and Wide IF Applications

Abstract

In this paper we propose a baseband noise-canceling receiver architecture to increase in-band linearity. A key feature of the architecture is that all active circuits are in baseband, including the LNTA. The LNTA operating at baseband frequencies allows the use of feedback to increase the linearity. The paper analyzes a trade-off that exists between in-band linearity and noise in mixer-first receivers and shows how the proposed architecture breaks such trade-off. The receiver targets high IF bandwidths, enabled by a TIA composed of an OpAmp using only inverters. The paper describes the stabilization mechanism of this OpAmp with a unity gain bandwidth (UGB) of 7.6GHz. The receiver is fabricated in 22nm FDSOI CMOS. Measured results show an in-band IIP3 of > 9dBm for an IF bandwidth of 175MHz with sub-5dB NF across 1-6GHz LO.

A 0.1-1.9GHz 65nm CMOS variable-gain mixer-first receiver with DSA and noise-shaping TIA

“…The topology in Fig. 1(d) [13,14] proposed a baseband noisecanceling receiver architecture with all active circuits operating in baseband, which breaks the tradeoff allowing to achieve both low NF and high in-band linearity but it need more power consumption and area for the auxiliary path.…”

19.1 A 300MHz-BW, 27-to-38dBm In-Band OIP3 sub-7GHz Receiver for 5G Local Area Base Station Applications

“…However, the series resistor degrades the RX noise figure (NF). Therefore, [3] added an auxiliary noise-canceling path to remove the matching resistor noise, at the cost of doubling the number of wideband TIAs and thus RX's power consumption (P DC ). Alternatively, as shown in Fig.…”

Interference-robust CMOS receivers for IoT : Highly linear RF frontends at low power

“…At in-band and transition frequencies, the achievable linearity of passive mixerfirst receiver is limited by the equivalent baseband impedance and the loop-gain of the baseband amplifier [80]. As seen in Fig.…”

“…2.18, large equivalent baseband impedance increases the voltage swing at the baseband terminal of MOST switches and induces V GS -related non-linearity in the switches. Moreover, for a given impedance matching condition, the large baseband impedance also reduces the loop-gain of the baseband TIA and limits the benefits of feedback linearisation [80]. Hence, baseband amplifiers with high open loop gain are preferred for high in-band and transition-band linearity, at the expense of large baseband power.…”

“…Hence, baseband amplifiers with high open loop gain are preferred for high in-band and transition-band linearity, at the expense of large baseband power. Please note that the loop gain and in-band linearity can also be increased by using large source resistance at the input of switches [80]. However such approach requires passive resistors at the RF terminals of MOST switches to achieve better in-band and out-of-band linearity at the expense of degraded noise performance and power consumption [79].…”