A 98 GHz voltage controlled oscillator in SiGe bipolar technology

Perndl,; Knapp,; Aufinger,; Meister,; Simburger,; Scholtz,

doi:10.1109/bipol.2003.1274937

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A 9 8 G H Z V C O In S I G E B I P O L a R T E C H N O L O G Y1

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2005

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Cited by 8 publications

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“…With the grounded coplanar transmission line TRL1 the impedance of the (Kehrer et al, 2003) The measured eye opening is 2 x l 0 0 m V on an external 50 ~q load. The MUX draws 66 mA at 1.5 V. The demultiplexer is tested with a 40 Gb/s input data stream with 2 x 250 mVpp input Perndl et al, 2003) output network, comprising the pad capacitance and the 50 impedance of the measurement equipment in parallel, is transformed into a low impedance at the collector of QI. So the output power is increased and the output load is isolated from the resonator.…”

Section: A 9 8 G H Z V C O In S I G E B I P O L a R T E C H N O L O G Ymentioning

confidence: 99%

CMOS and SiGe bipolar circuits for applications up to 110 GHz

Scholtz

Kehrer²,

Tiebout³

et al. 2003

Elektrotech. Inftech.

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Section: A 9 8 G H Z V C O In S I G E B I P O L a R T E C H N O L O G Ymentioning

confidence: 99%

CMOS and SiGe bipolar circuits for applications up to 110 GHz

Scholtz

Kehrer²,

Tiebout³

et al. 2003

Elektrotech. Inftech.

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Heterojunction Bipolar Transistor

Prasad

2005

Encyclopedia of RF and Microwave Engineering

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The major advances in heterojunction bipolar transistor (HBT) technology since the mid‐1980s is covered in this article. The cutoff frequency ( f T ) and the maximum oscillation frequency ( f max ) have reached record highs. Indium phosphide (InP) HBTs have shown ( f T ) and ( f max ) in excess of 450 GHz and gate delays of 1.95 ps. Silicon–germanium (SiGe) HBTs have demonstrated 350 GHz ( f T ) and gate delays of 3.6 ps. The improved performance of the devices has resulted in impressive circuit results. Static frequency dividers operating at 152 GHz has been reported in InP HBT technology. SiGe HBT technology has demonstrated dynamic frequency dividers running at 110 GHz. Multiplexer/demultiplexer (MUX/DMUX) circuits operating at 40 Gbps (gigabits per second) were demonstrated with InP HBTs. On the other hand, 50‐Gbps 4–1 MUX/DMUX circuits have been shown with SiGe HBTs.

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