A 800 V dual conduction paths segmented anode LIGBT with low specific on-resistance and small shift voltage

Abstract

A dual conduction paths segmented anode lateral insulated-gate bipolar transistor (DSA-LIGBT) which uses triple reduced surface field (RESURF) technology is proposed. Due to the hybrid structures of triple RESURF LDMOS (T-LDMOS) and traditional LIGBT, firstly, a wide p-type anode is beneficial to the small shift voltage .V ST ) and low specific on-resistance (R on;sp ) when the anode voltage (V A ) is larger than V ST . Secondly, a wide ntype anode and triple RESURF technology are used to get a low R on;sp when V A is less than V ST . Meanwhile, it can accelerate the extraction of electrons, which brings a low turn-off time (T off ). Experimental results show that: V ST is only 0.9 V, R on;sp (R on Area) are 11.7 and 3.6 mm 2 when anode voltage V A equals 0.9 and 3 V, respectively, the breakdown voltage reaches to 800 V and T off is only 450 ns.

Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs

“…Generally, as shown in Figure 2(a), the Miller capacitance (C GC ) and the gate-emitter capacitance (C GE ) share the gate drive current (I G ) during the switching transients of an IGBT, and the relation of the currents is given by Equation (1).…”