A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar

Trotta, S.; Knapp, H.; Dibra, Donald; Aufinger, Klaus; Meister, T.F.; Böck, J.; Simbürger, W.; Scholtz, Arpad L.

doi:10.1109/isscc.2007.373478

Cited by 24 publications

(10 citation statements)

References 8 publications

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“…Pseudorandom noise modulated CW radars [7] that exploit pulse compression techniques for temporal energy distribution are a viable option especially for lower node digitally-intensive implementations [8], but come with a major drawback [9] that their baseband bandwidth equals half of the radio frequency (RF) one. This fact proves to be particularly bothersome in ultrahigh resolution sensors where power-hungry data converters are unavoidable.…”

Section: Introductionmentioning

confidence: 99%

On fundamental operating principles and range-doppler estimation in monolithic frequency-modulated continuous-wave radar sensors

Milovanović

2018

FACTA U EE

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In an overview of Horizontal Current Bipolar Transistor (HCBT) technology, the state-of-the-art integrated silicon bipolar transistors are described which exhibit f T and f max of 51 GHz and 61 GHz and f T BV CEO product of 173 GHzV that are among the highest-performance implanted-base, silicon bipolar transistors. HBCT is integrated with CMOS in a considerably lower-cost fabrication sequence as compared to standard vertical-current bipolar transistors with only 2 or 3 additional masks and fewer process steps. Due to its specific structure, the charge sharing effect can be employed to increase BV CEO without sacrificing f T and f max. Moreover, the electric field can be engineered just by manipulating the lithography masks achieving the high-voltage HCBTs with breakdowns up to 36 V integrated in the same process flow with high-speed devices, i.e. at zero additional costs. Double-balanced active mixer circuit is designed and fabricated in HCBT technology. The maximum IIP3 of 17.7 dBm at mixer current of 9.2 mA and conversion gain of-5 dB are achieved.

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Section: Introductionmentioning

confidence: 99%

On fundamental operating principles and range-doppler estimation in monolithic frequency-modulated continuous-wave radar sensors

Milovanović

2018

FACTA U EE

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“…The CMOS‐based single chip front‐ends of the SRR will become very popular since they do not need as much output power as the long range radars. Since phase modulation (PM) radar schemes have a more digital nature than frequency modulated continuous wave (FMCW) ones, they have been implemented to achieve SRR systems . However, although recent works have shown the potential of W‐band automotive sensor applications with silicon‐based technologies, they have still just integrated limited RF blocks on a chip.…”

Section: Introductionmentioning

confidence: 99%

A fully integrated W‐band pulse compression radar CMOS transceiver

Kim

Jang

Hong

2017

Micro & Optical Tech Letters

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A fully integrated ultra‐wideband (UWB) W‐band pulse compression radar transceiver in a 65‐nm CMOS technology is presented. The transceiver adopts a pulse compression scheme for high power spectral density with low TX leakage. Two identical voltage controlled oscillators, which are coupled through the second harmonic, are designed to achieve high output power and low phase noise without buffers. A transformer‐based local oscillator distribution network is proposed to achieve both small chip area and high port‐to‐port isolation. The transceiver chip produces 7.5‐GHz UWB RF pulses with 14.5‐dBm peak output power in the tuning range of 75–81 GHz, while the receiver shows a dynamic range of above 60 dB. The radar module was realized with waveguide transitions from a micro‐strip to a WR‐10 waveguide, and was capable of differentiating two targets with 6.5‐cm separation within 30 m distance.

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“…The radar system used to be installed in luxury cars. Recently it has been implemented by SiGe technology [1], [2]. With the rapid progress of CMOS technology, the transistor speed raises up dramatically to make it possible to design such a system with low cost and high integration.…”

Section: Introductionmentioning

confidence: 99%

16.9-mW 33.7-dB gain mmWave receiver front-end in 65 nm CMOS

Kuo

2012

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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This work presents a low power receiver front-end design for the 77 GHz radar application. The theoretical maximum achievable gains in the LNA and the mixer are derived by using energy conservation principle. It is shown that the maximum gain can be increased by raising the impedance ratio between stages. The impedance transformation is able to provide high passive gain without any power consumption. Moreover, the quality of the passive components plays a critical role to approach the maximum gain condition. Accordingly a low power receiver front-end is designed in 65 nm CMOS. The measured results show the highest gain of 33.7 dB at 73 GHz with 3 dB bandwidth from 67 GHz to 75 GHz. The input return loss, P1dB, IIP3, and NF at IF frequency of 8 MHz, are 16.4 dB, -32 dBm, -19 dBm, and 12.2 dB, respectively. The power consumption is only 16.9 mW from a 1 V supply. To the best of our knowledge, this work shows the highest gain while consumes the lowest power as compared to the prior works.

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A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar

Cited by 24 publications

References 8 publications

On fundamental operating principles and range-doppler estimation in monolithic frequency-modulated continuous-wave radar sensors

On fundamental operating principles and range-doppler estimation in monolithic frequency-modulated continuous-wave radar sensors

A fully integrated W‐band pulse compression radar CMOS transceiver

16.9-mW 33.7-dB gain mmWave receiver front-end in 65 nm CMOS

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