A 78nm 6F/sup 2/ DRAM technology for multigigabit densities

Fishburn, F.; Busch, B.; Dale, J.R.; Hwang, D.; Lane, Richard Q.; McDaniel, T.; Southwick, S.; Turi, R.; Wang, H.; Tran, L.C.

doi:10.1109/vlsit.2004.1345374

Cited by 5 publications

(2 citation statements)

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“…The TiN is a major candidate of the electrode of the MIM capacitor for the DRAM application. [5][6][7][8][9] Hence, in this study, we investigated the microstructural evolution of TiN ($4:9 nm)/Al 2 O 3 ($1:8 nm)/HfO 2 ($4:2 nm)/Al 2 O 3 ($1:7 nm)/ TiN ($4:6 nm)/SiO 2 ($1:5 nm)/Si MIM capacitor sample with TiN electrode after 1000 C rapid thermal annealing (RTA) (N 2 , 1 atm, 60 s, ramp rate = 125 C/s).…”

Section: Introductionmentioning

confidence: 99%

Microstructural Evolution of Metal–Insulator–Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature

Lin

Wang

Tzeng

et al. 2006

jjap

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The rougher surface and raised-hollow holes were observed in the TiN/Al2O3/HfO2/Al2O3/TiN/SiO2/Si multi-stack metal–insulator–metal (MIM) capacitor sample after 1000 °C, 60 s rapid thermal annealing (RTA) process in N2. The surface became rougher partially resulted from the nucleation of TiN layer after RTA. Experimental results also indicated that the oxygen content in the HfO2 was desorbed and the remaining Hf was crystallized. Also, the TiN and Al2O3 layers were intermixed and partially re-crystallized at this high temperature. Very clear morié fringes could be observed in the high-resolution transmission electron microscopy (HR-TEM) micrographs. Also, the energy dispersive spectroscopy (EDS) results indicated that the nitrogen in TiN was desorbed and the TiN was phase transformed to TiO2. This phenomenon might result from the TiN oxidation process during the high-temperature thermal annealing.

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Section: Introductionmentioning

confidence: 99%

Microstructural Evolution of Metal–Insulator–Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature

Lin

Wang

Tzeng

et al. 2006

jjap

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“…Thus, Al 2 O 3 is a candidate material to replace SiO 2 layers in microelectronic devices, such as the dielectric layer of CMOSFETs, and DRAM capacitors. [7][8][9] Recently, a mixture of Al 2 O 3 and other higher materials has been studied to obtain a more stable insulation with a higher effective . [10][11][12][13] The Al 2 O 3 thin film can be prepared by various methods such as molecular beam epitaxy, 14 chemical vapor deposition, 15 plasmaenhanced metallorganic chemical vapor deposition, 16 reactive sputtering, 17 and atomic layer deposition ͑ALD͒.…”

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confidence: 99%

Property Changes of Aluminum Oxide Thin Films Deposited by Atomic Layer Deposition under Photon Radiation

Hwang

Kim

2006

J. Electrochem. Soc.

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Aluminum oxide thin films were deposited by atomic layer deposition ͑ALD͒ using trimethyl aluminum and water under UV radiation. Films were prepared at two different deposition temperatures of 260 and 370°C. The films deposited at 370°C had a higher O/Al atomic ratio than those deposited at 260°C. The upper valence band ͑VB͒ spectrum, observed by X-ray photoelectron spectroscopy ͑XPS͒, of the aluminum oxide thin film deposited under UV radiation during water purge was different from that of a nonradiated thin film, indicating a structural change by the UV radiation. For the film deposited at 370°C, the effective mass ͑m * ͒ was estimated to be larger than 0.35m 0 , and an effective electron barrier height of 3.8 eV was obtained for m * = 0.4m 0 by fitting the I-V curve with the Fowler-Nordheim ͑FN͒ tunneling model. The films, of which leakage current densities were reduced by UV radiation, showed an increase in electron barrier height for FN tunneling conduction. In addition, the conduction band offset with Si, calculated from the VB offsets and the bandgap values obtained by XPS, was also increased for the UV-radiated sample.

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NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Non-volatile Memory

Dong

Jouppi

et al. 2013

Emerging Memory Technologies

146

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A 78nm 6F/sup 2/ DRAM technology for multigigabit densities

Cited by 5 publications

References 0 publications

Microstructural Evolution of Metal–Insulator–Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature

Microstructural Evolution of Metal–Insulator–Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature

Property Changes of Aluminum Oxide Thin Films Deposited by Atomic Layer Deposition under Photon Radiation

NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Non-volatile Memory

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