Property Changes of Aluminum Oxide Thin Films Deposited by Atomic Layer Deposition under Photon Radiation

No, Sang Yong; Hwang, Cheol Seong; Kim, Hyeong Joon

doi:10.1149/1.2186179

Cited by 32 publications

(21 citation statements)

References 48 publications

(46 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The improvement is mainly attributed to the use of a modify ALD process in this work, where photon radiation was applied during the deposition. 18 In this work, it has also proved that by introducing a thin layer of nitrided oxide in between SiC and Al 2 O 3 , the negative effective oxide charge can be reduced significantly.…”

mentioning

confidence: 67%

See 1 more Smart Citation

Electronic Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3]/Thermal-Nitrided SiO[sub 2] Stacking Dielectric on 4H SiC

Cheong

Moon

Eom

et al. 2007

Electrochem. Solid-State Lett.

Self Cite

View full text Add to dashboard Cite

We report the first electronic-property results on atomic-layer deposited Al 2 O 3 /thermal-nitrided SiO 2 stacking dielectric on n-type 4H SiC. The effects of the ultrathin thermal-nitrided SiO 2 ͑2, 4, and 6 nm͒ on the SiC-based metal oxide semiconductor ͑MOS͒ characteristics have also been investigated, compared, and explained. A significant improvement in dielectric reliability and dielectric breakdown field has been observed after an ultrathin nitrided oxide has been introduced between Al 2 O 3 and SiC. The best reported results were obtained from Al 2 O 3 stacked with the thickest nitrided oxide ͑6 nm͒.The quality and reliability of gate oxide on SiC are the determining factors for this electronic material to be successfully employed as the substrate of metal oxide semiconductor ͑MOS͒ based devices for high-temperature, high-power, high-frequency, and/or nonvolatile memory applications. 1 Until now, the quality and reliability of thermally nitrided SiO 2 has been considered as the best reported gate oxide but its SiO 2 -SiC interface and near interface-trap densities are still higher compared with its Si counterpart. [2][3][4][5] The reasons of these are mainly attributed to the accumulation of carbon cluster at the interface and deficiency of oxygen near the interface. 6,7 Efforts searching for the cause of defect states and improving the oxide quality are actively on going. Even if the SiC-SiO 2 interface trap density can be reduced further, at high electric-field ͑E͒ application, the oxide reliability appears to be a major problem. The low-dielectric constant ͑͒ of SiO 2 , compared with SiC, may induce ϳ2.5 times higher E in the oxide. To overcome this problem, highdielectrics ͑AlN, Al 2 O 3 , HfO 2 , La 2 O 3 , etc.͒, as an alternative gate oxide deposited on SiC, have been proposed. [8][9][10][11][12][13][14][15][16][17] Of the numerous reported high-dielectrics on SiC, Al 2 O 3 is the most widely investigated gate dielectric due to its excellent lattice matched with SiC, 18 high value ͑8.3͒, 17 good thermal stability, 12,13 reasonably high conduction band offset ͑1.5 eV between 4H SiC and Al 2 O 3 ͒, 11 and relatively large dielectric bandgap ͑ϳ7 eV͒. 11 It has been reported that types of deposition techniques, postdeposition heat-treatment conditions, and SiC surface treatment are able to influence its MOS characteristics. 11-17 So far, the most reported atomic-layer deposited Al 2 O 3 on either 4H or 6H SiC has demonstrated some encouraging electrical characteristics. However, its leakage current, oxide reliability, build-in effective oxide charge, and flatband voltage shift ͑⌬V FB ͒ are relatively high compared with thermally nitrided SiO 2 . 11-17 The electrical properties of this single layer high-dielectric could be significantly improved by introducing an ultrathin and larger conduction/valence band offset buffer oxide between the high-dielectric and SiC. This has been proven in HfO 2 -SiC system, where a 4-nm thick thermal-nitrided SiO 2 has been used. 9 However, none of this have been reporte...

show abstract

mentioning

confidence: 67%

“…The deposition procedure has been explained elsewhere. 18 In short, the deposition process was performed under UV radiation and heated at 370°C using trimethyl aluminium and water as the precursor. The deposited Al 2 O 3 thickness was ϳ13 nm and the subsequent steps of MOS-capacitor fabrications have been described elsewhere.…”

mentioning

confidence: 99%

Electronic Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3]/Thermal-Nitrided SiO[sub 2] Stacking Dielectric on 4H SiC

Cheong

Moon

Eom

et al. 2007

Electrochem. Solid-State Lett.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The lower carbon content in the combined process can partly explain the lower Dit [29], and thus the lifetime improvement compared to the samples deposited using ozone as sole oxygen source.…”

Section: Elemental Analysismentioning

confidence: 99%

Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al2O3

Gastrow

Putkonen

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

“…The majority of the examples in Table 1 are energy‐enhanced ALD processes, so‐called because energy is not supplied to the substrate as heat, but to the co‐reactant gas to give a reactive species. Therefore, energy‐enhanced ALD encompasses O 3 ‐based and plasma‐enhanced ALD,37–39 in addition to other ALD techniques such as ion‐enhanced ALD and radical‐enhanced ALD,37, 39 photon‐enhanced ALD and UV‐catalyzed ALD,36, 40–42 and hot‐wire ALD 43. This extra energy is important for driving the reactions that would otherwise not (or hardly) proceed at such low substrate temperatures.…”

Section: Introductionmentioning

confidence: 99%

Room‐Temperature ALD of Metal Oxide Thin Films by Energy‐Enhanced ALD

Potts

Profijt

Roelofs

et al. 2013

Chemical Vapor Deposition

View full text Add to dashboard Cite

Room-temperature atomic layer deposition (RT-ALD) processes are of interest for applications using temperature-sensitive substrates. Challenges with RT-ALD arise when the precursors are not sufficiently volatile, purge times become impractically long, and precursors or co-reactants are unreactive with the surface species. In several cases, the latter two challenges can be overcome using energy-enhanced ALD. Here, we demonstrate RT-ALD (258C) processes for Al 2 O 3 , TiO 2 , and SiO 2 from trimethylaluminum (Al(CH 3 ) 3 , TMA), titanium(IV) tetraisopropoxide (Ti(O i Pr) 4 , TTIP), and bis(diethylamino)silane (SiH 2 (-NEt 2 ) 2 , BDEAS) precursors with an O 2 plasma or O 3 gas as co-reactants. Saturated RT-ALD growth was obtained for all O 2 plasma processes and TMA/O 3 , whereas the TTIP/O 3 and BDEAS/O 3 processes gave no growth. Using these and literature results, the criteria for viable RT-ALD processes are discussed.

show abstract

Property Changes of Aluminum Oxide Thin Films Deposited by Atomic Layer Deposition under Photon Radiation

Cited by 32 publications

References 48 publications

Electronic Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3]/Thermal-Nitrided SiO[sub 2] Stacking Dielectric on 4H SiC

Electronic Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3]/Thermal-Nitrided SiO[sub 2] Stacking Dielectric on 4H SiC

Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al2O3

Room‐Temperature ALD of Metal Oxide Thin Films by Energy‐Enhanced ALD

Contact Info

Product

Resources

About