A 77 GHz (W-band) SiGe LNA with a 6.2 dB Noise Figure and Gain Adjustable to 33 dB

Reuter, Ralf; Yin, Yongsheng

doi:10.1109/bipol.2006.311132

Cited by 26 publications

(5 citation statements)

References 3 publications

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“…Compared to previous work [4], this is the first improved single-ended cascode SiGe 77~79 GHz LNA. The input P 1dB is up to -20 dBm which is much higher than the latest reported result -40 dBm in [7]. The separate measurement of the mixer at 79 GHz shows 7 dB gain and 18.72 dB NF, the input P 1dB compression point is -12 dBm which covers the linear range of signal from LNA and shows better linearity than the reported result -30 dBm in [2].…”

Section: Measurement Resultscontrasting

confidence: 56%

A Single-ended 79 GHz Radar Receiver in SiGe Technology

Wang

Glisic

Borngraeber

et al. 2007

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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For the first time a single-ended 79 GHz receiver in SiGe technology is reported in this paper for automotive radar application. The receiver consists of a single-ended cascode LNA, a single-ended RF double-balanced down-conversion micromixer, and a Colpitts VCO. The LNA and mixer present 21.7 dB and 7 dB gain at 79 GHz respectively, and VCO oscillates from 79 to 82 GHz. The measurement for the whole receiver at 79 GHz shows 20-26 dB gain in the linear region with stable IF output signal. The input P 1dB of the receiver is -35 dBm.

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Section: Measurement Resultscontrasting

confidence: 56%

A Single-ended 79 GHz Radar Receiver in SiGe Technology

Wang

Glisic

Borngraeber

et al. 2007

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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“…In simulation, the LNA exhibits a noise figure of 5.8 dB while offering a gain of 9.5 dB. Comparing these simulations to literature [17], it can be seen that the LNA's performance is state of the art. As already discussed for the TX path, pad capacitance and bond wire inductance have been considered for matching the RX input.…”

Section: Circuit Designmentioning

confidence: 67%

A SiGe transceiver chipset for automotive radar applications using wideband modulation sequences

Schoepfel

Kueppers

Aufinger

et al. 2019

Int. J. Microw. Wireless Technol.

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This paper presents a W-band MIMO radar transceiver chipset for automotive applications, based on a Silicon Germanium technology. It consists of a reference VCO, operating at a center frequency of 38 GHz and a companion IC that comprises a complete millimeter-wave transceiver at 76 GHz. This chipset enables building multipurpose MIMO radar systems that can be scaled in terms of transmitter and receiver count. What makes this system innovative is the fact that it is able to handle more broadband signals than systems presented in current literature and is furthermore not limited to one modulation scheme. The chipset is capable of transmitting and receiving any signal waveform. The main goal of this work was to create a functional version of a VCO and a one-channel transceiver MMIC. Furthermore a demonstrator for a proof of concept was designed to test the MMICs on a system level. The realized VCO MMIC achieves a tuning frequency range of 6 GHz with a center frequency of 38 GHz and consumes 152 mW from a 3.3 V supply. The transceiver MMIC is fully functional and achieves a saturated output power of 11.5 dBm while drawing 670 mW from a 3.3 V supply.

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“…The state-of-the-art demonstrates silicon circuits in W-band such as LNA, PA and mixer at 77GHz [4]- [7], and 94GHz [8]- [10], and 77GHz receivers and transmitters [11]- [15]. Concerning building block implementation, two kinds of design are reported: distributed [2] [4] [5] [11]- [14] and lumped [6] [10] [15].…”

Section: Introductionmentioning

confidence: 99%

mm-Waves design trends in BiCMOS technology

Taris

Severino

Deval

et al. 2008

2008 Joint 6th International IEEE Northeast Workshop on Circuits and Systems and TAISA Conference

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mm-Waves building block design is the meeting point of distributed and RF analog techniques. After reviewing the skills of a 130nm mm-Wave dedicated back-end BiCMOS technology, this paper investigates these two design methodologies in an 80GHz cascode differential LNA implementation. A third version of the circuit taking advantage of both approaches is finally proposed. Operating under 2.5V and consuming 17mA it exhibits a 20dB maximum gain at 79GHz, and performs 5.4dB Noise Figure.

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A 77 GHz (W-band) SiGe LNA with a 6.2 dB Noise Figure and Gain Adjustable to 33 dB

Cited by 26 publications

References 3 publications

A Single-ended 79 GHz Radar Receiver in SiGe Technology

A Single-ended 79 GHz Radar Receiver in SiGe Technology

A SiGe transceiver chipset for automotive radar applications using wideband modulation sequences

mm-Waves design trends in BiCMOS technology

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