A 75&amp;#x2013;90 GHz high linearity MMIC power amplifier with integrated output power detector

Canales, Fernando Diaz; Abbasi, Morteza

doi:10.1109/mwsym.2013.6697600

Cited by 6 publications

(3 citation statements)

References 11 publications

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“…물론 참고문헌 [10]의 포화전력값이 더 높지 만 이는 동작주파수가 40 GHz이다. MMIC 칩의 단위면적 당 포화전력을 mW/mm 2 로 계산한 전력밀도를 비교해 봐도 본 논문의 결과가 기존 전력증폭기 [5], [7]∼ [9] 보다 훨씬 우수 하고, 전력증폭기 [10] 와 비교해도 비슷한 성능을 보인다. This work* Ref.…”

Section: -1 트랜지스터 소자 특성 분석 및 설계unclassified

Design of a 60 GHz GaAs Enhancement-Mode pHEMT Power Amplifier MMIC with 28 dBm Output Power

Seo¹,

Lee²,

Shin³

2023

J. Korean Inst. Electromagn. Eng. Sci.

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A 60 GHz power amplifier (PA) monolithic microwave integrated circuit (MMIC) with +28 dBm output power is designed in an enhancement-mode 0.15 μm GaAs pseudomorphic high-electron-mobility transistor (pHEMT) technology. A two-stage topology and a four-way power combining technique are adopted to achieve a high power gain, high output power, and high linearity. Transistor-level circuit and layout designs are developed, and the circuit performances are verified through three-dimensional electromagnetic simulations. The designed PA MMIC exhibits a saturated output power of +28.4 dBm, output-referred 1-dB gain compression point of +28 dBm, power gain of +8.1 dB, and power added efficiency of 29.3 %. S-parameter simulations show that the small-signal gain is +8.1 dB, and the operating bandwidth is between 55.7 and 63.1 GHz, with a fractional bandwidth of 12.3 %. The supply voltages are 4 V for the drain and 0.6 V for the gate. The positive-only supply voltages resulting from the enhancement-mode pHEMT simplify the supply voltage network compared with the conventional depletion-mode pHEMT design. The layout die size of the PA MMIC is 1.99×1.62 mm 2 , and the power density performance of 214 mW/mm 2 is satisfactory.

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Section: -1 트랜지스터 소자 특성 분석 및 설계unclassified

Design of a 60 GHz GaAs Enhancement-Mode pHEMT Power Amplifier MMIC with 28 dBm Output Power

Seo¹,

Lee²,

Shin³

2023

J. Korean Inst. Electromagn. Eng. Sci.

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“…There are usually two kinds of power detectors: active and passive detectors. Active power detectors with a complementary metal oxide semiconductor [1][2][3][4] and field effect transistor technology [5] are very popular these days. High responsivity is achieved with active detectors.…”

Section: Introductionmentioning

confidence: 99%

Design of a full W‐band detector based on Schottky diode with quartz substrate

Guo

Cheng²,

et al. 2019

IET Microwaves, Antennas & Propagation

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A power detector based on Schottky diode with a quartz substrate is proposed in this study. A three‐dimensional model of the Schottky diode is built for accurate performance evaluation. A broadband input DC grounding circuit is designed based on two sets of radial stubs. An output chocking circuit is implemented using a single compact microstrip resonator cell, which features compact size and broad stopband. Input and output matching circuits are also introduced to achieve flat frequency response. Measured results agree well with simulated ones. The voltage sensitivity is about 6000–9500 mV/mW with −30 dBm drive power at the full W‐band (75–110 GHz). The detector also has outstanding temperature stability. The output voltage varies <6.3% with −3 dBm drive power when ambient temperature changes from −40 to +60°C.

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“…At E-band, GaN PAs [7] deliver more than 1 W OUT due to the high breakdown voltage while InP PAs [6] achieve PAE as high as 40% thanks to the high / MAX . Nevertheless, GaAs technology [8][9][10] has the advantages of relatively low cost, high yield, and easy foundry access, offering an attractive alternative for E-band applications.…”

Section: Introductionmentioning

confidence: 99%

A 0.45 W 18% PAE E‐Band Power Amplifier in 100 nm InGaAs pHEMT Technology

Zhao

2018

Wireless Communications and Mobile Computing

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This paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-band point-to-point communications. The device size and biasing conditions are optimized to enhance the overall performance at millimeter-wave frequencies. The complete PA consists of two unit PAs and each unit PA has four stages to improve the gain while ensuring stability from dc to the operating frequencies. A 4-way zero-degree combiner (in the unit PA) and a 2-way λ/2 combiner are used to boost the output power. Occupying 5 mm2, the proposed PA achieves an output power of 0.45 W with 17.9% PAE at 74 GHz.

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A 75–90 GHz high linearity MMIC power amplifier with integrated output power detector

Cited by 6 publications

References 11 publications

Design of a 60 GHz GaAs Enhancement-Mode pHEMT Power Amplifier MMIC with 28 dBm Output Power

Design of a 60 GHz GaAs Enhancement-Mode pHEMT Power Amplifier MMIC with 28 dBm Output Power

Design of a full W‐band detector based on Schottky diode with quartz substrate

A 0.45 W 18% PAE E‐Band Power Amplifier in 100 nm InGaAs pHEMT Technology

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