A 60GHz Miller Effect Based VCO in 65nm CMOS with 10.5% Tuning Range

Transformer-coupled cascode stage for mm-wave power amplifiers in sub-μm CMOS technology

“…Although mm-wave ICs have traditionally been domain of GaAs, InP, and pHEMT technologies, the continuous scaling of silicon processes has made sub-lm CMOS technologies valuable candidates to cover mm-wave applications, thus allowing integration of analog and digital parts in a single chip and reducing cost [1,2]. An increasing number of mm-wave building blocks have been successfully designed in sub-lm CMOS technologies [5][6][7], thanks to their transition frequencies (f T ) beyond 200 GHz.…”

Metamaterial based CMOS terahertz integrated circuits

“…A zero phase propagation mode operation is important for not only power combination but also phase noise reduction. The noise coupling network becomes reciprocal in the zero phase propagation mode, and the total phase noise will be reduced by N times when coupling N free running oscillators [41].…”

“…A zero phase propagation is not only important for power combination but also the phase noise reduction. The noise coupling network becomes reciprocal in zero-phase mode, and the phase noise at CON output becomes 1/N of a single free running oscillator [41]. The MPW unit-cell can be implemented on-chip by coupled T-line based resonator with C contributed by the parasitic capacitances of transistors as shown in Fig.…”

“…It is challenging to design a high output power THz signal source by single CMOS oscillator source with high efficiency as well as wide frequency tuning range (FTR). In CMOS process, one single oscillator usually has small output power that limited by single CMOS transistor with commonly observed low output power level [41,85,93], which is incapable of delivering a strong THz signal for transmission and processing. Similar to the approach utilized in power amplifier [94,95], output power combining of multiple CMOS oscillators can be considered to achieve a large output power at THz frequency.…”