A 60 GHz Drain-Source Neutralized Wideband Linear Power Amplifier in 28 nm CMOS

Thyagarajan, Siva V.; Niknejad, Ali M.; Hull, Christopher

doi:10.1109/tcsi.2014.2333682

Cited by 70 publications

(17 citation statements)

References 10 publications

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“…Table I shows a comparison of state-of-the-art 60 GHz CMOS PAs. Our PA achieves comparable BW −3dB as in a 28 nm PA [4], but with a much higher PAE. For P sat ≈18 dBm, only class-AB PA in [6] shows better PAE, but at a lower gain and BW.…”

Section: Measurement Resultsmentioning

confidence: 75%

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A wideband 60 GHz class-E/F<inf>2</inf> power amplifier in 40nm CMOS

Babaie

Staszewski

Galatro

et al. 2015

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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Section: Measurement Resultsmentioning

confidence: 75%

“…The additional insertion loss penalty is only ≤1.5 dB over the BW by using a k m =0.25 transformer. That penalty happens at the primary stages where it has negligible effect on the total PAE [4]. …”

Section: Power Amplifier Designmentioning

confidence: 99%

A wideband 60 GHz class-E/F<inf>2</inf> power amplifier in 40nm CMOS

Babaie

Staszewski

Galatro

et al. 2015

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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“…The literature offers a number of wideband techniques [45] to extend the amplifier bandwidth. The measured power of the ∼20 GHz fundamental is −56.5 dBm, which is 62 dB below the carrier.…”

Section: Implementation and Experimental Resultsmentioning

confidence: 99%

A 60 GHz Frequency Generator Based on a 20 GHz Oscillator and an Implicit Multiplier

Zong

Babaie

Staszewski

2016

IEEE J. Solid-State Circuits

115

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This paper proposes a mm-wave frequency generation technique that improves its phase noise (PN) performance and power efficiency. The main idea is that a fundamental 20 GHz signal and its sufficiently strong third harmonic at 60 GHz are generated simultaneously in a single oscillator. The desired 60 GHz local oscillator (LO) signal is delivered to the output, whereas the 20 GHz signal can be fed back for phase detection in a phaselocked loop. Third-harmonic boosting and extraction techniques are proposed and applied to the frequency generator. A prototype of the proposed frequency generator is implemented in digital 40 nm CMOS. It exhibits a PN of −100 dBc/Hz at 1 MHz offset from 57.8 GHz and provides 25% frequency tuning range (TR). The achieved figure-of-merit (FoM) is between 179 and 182 dBc/Hz.

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“…Also, the proposed TRX is successfully and efficiently using of a single antenna in order to reduce the area and power consumption. Moreover, to gain a fine isolation between various blocks, on-chip transformers are widely utilized [13], [14]. The non-coherent OOK modulation has been selected due to the proper characteristics such as being low-power, having simple TRX architecture, high-integrity, robust to carrier frequency shift, etc.…”

Section: Introductionmentioning

confidence: 99%

Notice of Retraction: A 210 GHz Fully-Integrated OOK Transceiver for Short-Range Wireless Chip-to-Chip Communication in 40 nm CMOS Technology

Moghadami

Hajilou

Agrawal

et al. 2015

IEEE Trans. THz Sci. Technol.

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This paper presents a fully-integrated 210 GHz transceiver (TRX) with non-coherent on-off-keying (OOK) modulation for short-range multi-Gb/s wireless chip-to-chip communication in 40 nm CMOS technology. The direct detection-based receiver (RX) part comprises an on-die 0.1 dBi gain modified dipole antenna, an 8-stage 210-GHz 21.7-dB peak gain low noise amplifier (LNA) along with differential-pair neutralization technique and a 2.83-kV/W peak responsivity simple demodulator (push detector) in order to operate efficiently in THz regime. The phased-locked transmitter (TX) consists of a 210 GHz 1.3 dBm output power 3.8% locking-range phased-locked loop (PLL), two modified cascode transistors as a simple OOK modulator, a 4-stage 210-GHz 19.4-dB peak power gain power amplifier (PA) with neutralization and especially layout enhancement techniques and a similar modified on-die dipole antenna. The implemented PLL employs a triple-push circular-geometry voltage-controlled oscillator (VCO) followed by a divider chain 1024 . The proposed TRX achieved error-free operation 10 with 6.8 dBm of EIRP at center frequency of 210 GHz with 2 -PRBS of 10.7 Gb/s datarate over 1 cm distance while consuming 421 mW of DC power which results to energy efficiency of 39.3 pJ/bit. Index Terms-CMOS, on-chip antenna, on-off keying (OOK), phase-locked loop (PLL), receiver (RX), RFIC, THzIC, terahertz (THz) transceiver, transmitter (TX), voltage-controlled oscillator (VCO), 200 GHz.

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A 60 GHz Drain-Source Neutralized Wideband Linear Power Amplifier in 28 nm CMOS

Cited by 70 publications

References 10 publications

A wideband 60 GHz class-E/F<inf>2</inf> power amplifier in 40nm CMOS

A wideband 60 GHz class-E/F<inf>2</inf> power amplifier in 40nm CMOS

A 60 GHz Frequency Generator Based on a 20 GHz Oscillator and an Implicit Multiplier

Notice of Retraction: A 210 GHz Fully-Integrated OOK Transceiver for Short-Range Wireless Chip-to-Chip Communication in 40 nm CMOS Technology

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