A 60–90GHz stagger-tuned low-noise amplifier with 1.2dBm OP1dB in 65nm CMOS

Mustapha, Ademola Akeem; Shabra, Ayman

doi:10.1109/icecs.2017.8292025

Cited by 5 publications

(3 citation statements)

References 9 publications

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“…According to this idea, in multistage amplifiers, the interstage resonant circuit of amplifier generates different resonant frequencies f L and f H , and the central frequencies of each amplifier are distributed near f L and f H ; after the connection, the frequency response is relatively flat under broadband 8 . Many results show that the stagger tuning technology can effectively improve the bandwidth of multistage LNA, and it is often used in the design of high band broadband LNA 9–11 …”

Section: Bandwidth Expansion Technologymentioning

confidence: 99%

A fusion bandwidth extension technique for broadband low‐noise amplifier

Wang

Lai³

2023

Circuit Theory & Apps

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SummaryWideband low‐noise amplifiers (LNAs) are widely used in 5G and 6G communication systems. This paper first analyzes two common bandwidth extension technologies: the stagger tuning technique and the magnetically coupled resonators (MCR) technique. Then, a four‐stage LNA based on double‐tuned transformer combined with stagger tuning idea and MCR idea was proposed. In order to improve the broadband characteristics of the LNA, the loose coupling double‐tuned transformer is carefully designed. Compared with the traditional stagger tuning LNA, it has better broadband characteristics, lower element error sensitivity, and lower design complexity. This designs a gain bandwidth product of 1.48 T with a −3‐dB bandwidth in 9.11 GHz and the noise factor is lower than 3 dB, which covers more than 45% −3‐dB fractional bandwidth. The LNA consumes 37‐mW power with a 1.1‐V supply and occupies 1.22 × 0.4 mm2.

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Section: Bandwidth Expansion Technologymentioning

confidence: 99%

A fusion bandwidth extension technique for broadband low‐noise amplifier

Wang

Lai³

2023

Circuit Theory & Apps

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“…However, the degenerated inductor used in this type of amplifier can reduce its gain, which is only acceptable at these frequencies due to the high intrinsic transistor gain. As the frequency increases, such as in the V-band, E-band, and W-band, the common-source amplifier is often replaced by a cascode amplifier, which provides higher gain per stage [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

160 GHz D-Band Low-Noise Amplifier and Power Amplifier for Radar-Based Contactless Vital-Signs-Monitoring Systems

Mustapha

Sanduleanu

2023

Micromachines

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This paper presents a 160 GHz, D-band, low-noise amplifier (LNA) and a D-band power amplifier (PA) implemented in the Global Foundries 22 nm CMOS FDSOI. The two designs are used for the contactless monitoring of vital signs in the D-band. The LNA is based on multiple stages of a cascode amplifier topology with a common source topology adopted as the input and output stages. The input stage of the LNA is designed for simultaneous input and output matching, while the inter-stage-matching networks are designed for maximizing the voltage swing. The LNA achieved a maximum gain of 17 dB at 163 GHz. The input return loss was quite poor in the 157–166 GHz frequency band. The −3 dB gain bandwidth corresponded to 157–166 GHz. The measured noise figure was between 7.6 dB and 8 dB within the −3 dB gain bandwidth. The power amplifier achieved an output 1 dB compression point of 6.8 dBm at 159.75 GHz. The measured power consumptions of the LNA and the PA were 28.8 mW and 10.8 mW, respectively.

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“…Instead of that, current reuse technology and sub-threshold operations are recommended to reduce the power consumption of the circuit [5,6]. Implementing stagger tuning technique and resistive shuntfeedback configuration can increase the bandwidth [7][8][9]. While considering the NF and power dissipation, stagger tuning technique is better to achieve wideband.…”

Section: Introductionmentioning

confidence: 99%

Design and optimisation of feedforward noise cancelling complementary metal oxide semiconductor LNA for 2.4 GHz WLAN applications

Roobert¹,

Rani²,

Rajaram³

2019

IET Circuits, Devices & Systems

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This study deals with the design and optimisation of two-stage complementary metal oxide semiconductor low noise amplifier (LNA) for wireless local area network (WLAN) applications. IEEE 802.11n WLAN standard provides up to 600 Mbps speed with 40 MHz channel bandwidth and high throughput. The receiver of these WLAN applications requires LNA with higher gain and minimum noise figure (NF). Elephant Herding Optimisation technique was involved for the first time to optimise the performance of the LNA. The post-layout simulation shows that a maximum gain of 26.7 dB at 2.4 GHz is achieved in the proposed design. Feedforward noise cancelation technique is involved to get a reduced NF of 1.12 dB. The first and second stages are tuned to cover the 3 dB maximum gain bandwidth of 3.2 GHz (from 1.7 to 4.4 GHz). This LNA is designed at 90 nm technology with the supply voltage of 0.5 and 1.2 V, and consumes 8.9 mW of power. Current reuse technology is used to reduce power consumption. The input and output return losses have been found to be −18 and −15 dB, respectively at the targeted 2.4 GHz frequency. Third-order input intercept point of the optimised LNA is −8.1 dBm.

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A 60–90GHz stagger-tuned low-noise amplifier with 1.2dBm OP1dB in 65nm CMOS

Cited by 5 publications

References 9 publications

A fusion bandwidth extension technique for broadband low‐noise amplifier

A fusion bandwidth extension technique for broadband low‐noise amplifier

160 GHz D-Band Low-Noise Amplifier and Power Amplifier for Radar-Based Contactless Vital-Signs-Monitoring Systems

Design and optimisation of feedforward noise cancelling complementary metal oxide semiconductor LNA for 2.4 GHz WLAN applications

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