A 60–110 GHz Transmission-Line Integrated SPDT Switch in 90 nm CMOS Technology

Lai, Ruei-Bin; Kuo, Jeff; Wang, Huei

doi:10.1109/lmwc.2009.2038519

Cited by 39 publications

(18 citation statements)

References 10 publications

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“…Table shows the performances comparison between SPST switches based on the used compensation tools: transmission lines , lumped inductor , and DGS LPF. From the table, DGS LPF switch offers the best compromise in term of performances and sizes despite the dummies issues that affect switch performances at high frequency.…”

Section: Resultsmentioning

confidence: 99%

“…Single‐pole single‐throw (SPST) switch is a basic circuit to build single‐pole‐multiple‐throw switches for time‐domain‐duplexing transceivers, switched‐beam arrays, and multiple‐input and multiple‐output systems . Figure a shows the schematic of a conventional SPST switch that connects two shunt nMOS transistors M 1 and M 2 to an inductive transmission line TL.…”

Section: Introductionmentioning

confidence: 99%

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An ultrawideband SPST switch using defected ground structure low pass filter in 65-nmCMOS technology

Agung

Zhang

Lim

2015

Int J RF and Microwave Comp Aid Eng

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In this article, we propose a novel concept of applying a defected ground structure low pass filter (DGS LPF) to the design of switches. We highlight that the DGS structure has such advantages as consuming less silicon area and providing another degree of design freedom to optimize the switch performances. To prove the concept, we analyze, design, and characterize a single-pole single-throw (SPST) switch using a DGS LPF in 65nm CMOS technology. We show that the DGS LPF SPST switch with active size of 125 3 88 mm 2 can cover an ultrawideband from DC to 77 GHz. V C 2015 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:758-768, 2015.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An ultrawideband SPST switch using defected ground structure low pass filter in 65-nmCMOS technology

Agung

Zhang

Lim

2015

Int J RF and Microwave Comp Aid Eng

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“…In [188], a 60 to 110 GHz SPDT switch with traveling wave concept and body bias technique is implemented in the 90 nm CMOS technology. It has a measured insertion loss of 3-4 dB and a measured isolation better than 25 dB.…”

Section: Switch In Si-based Technologymentioning

confidence: 99%

“…Circulator, which is a three ports component, is usually utilized to provide simultaneously transmit and receive signals without diplexer filters or RF switches [179,188,[190][191][192][193][194][195][196]. An active circulator has wider operation bandwidth, lower insertion loss and smaller area than a passive circulator.…”

Section: Circulator and Isolator In Si-based Technologymentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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“…In Refs. , traveling‐wave and filter‐concept single‐pole double throw (SPDT) switches have been proposed for wide bandwidth operation. Nonetheless, the isolation performance of those switches is not enough for system applications.…”

Section: Introductionmentioning

confidence: 99%

Design of a 75–110‐GHz millimeter‐wave 90‐nm CMOS highly isolated transmitter/receiver switch by leakage‐cancellation technique

Chou¹,

Huang²,

Lai³

et al. 2016

Micro & Optical Tech Letters

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This article presents 75‐110‐GHz highly isolated T/R switch in 90nm CMOS. The proposed T/R switch circuit design is focused on highly isolation performance which is achieved by using both parallel inductors and leakage‐cancellation techniques. To also reduce insertion loss which is also an important design key point, series‐shunt single‐pole double throw (SPDT) switch with optimizing transistors size and body‐floating technique are adopted. From the experiment results, the designed switch has good performance of the return loss, insertion loss and isolation in W‐band. Compared with some previously reported works, the designed switch has the best isolation performance of 48 dB at 94‐GHz, and IP1dB is > 9dBm, respectively.© 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2725–2731, 2016

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A 60–110 GHz Transmission-Line Integrated SPDT Switch in 90 nm CMOS Technology

Cited by 39 publications

References 10 publications

An ultrawideband SPST switch using defected ground structure low pass filter in 65-nmCMOS technology

An ultrawideband SPST switch using defected ground structure low pass filter in 65-nmCMOS technology

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

Design of a 75–110‐GHz millimeter‐wave 90‐nm CMOS highly isolated transmitter/receiver switch by leakage‐cancellation technique

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