A 6-W Ka-band power module using MMIC power amplifiers

Ingram, D. L.; Stones, D.I.; Elliott, J.; Wang, Huei; Lai, R.; Biedenbender, M.

doi:10.1109/22.643855

Cited by 28 publications

(7 citation statements)

References 9 publications

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“…Fig. 9 reports, still by TRW Inc., a power module combining two GaAs MMIC power amplifiers (two stages) and a driver (two stages) to achieve the record output power of 37.7 dBm at 34.5 GHz, with a corresponding efficiency of 24% and a smallsignal gain of 22 dB [92]. The technology was not mature enough to realize a single chip, mainly due to the losses of the combining and matching networks, which were realised off-chip as highlighted in Fig.…”

Section: A Standard Pasmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

124

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: A Standard Pasmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

124

View full text Add to dashboard Cite

show abstract

“…[1], [12] On the other hand, high power density operation of GaN HEMTs, as high as ten times that of GaAs PHEMTs, could enable the next generation power amplifiers with both high power and PAE with a minimized combiner loss and better output matching. In 2001, RF power testing of discrete AlGaN-GaN HEMTs was done at 20 GHz, showing a promising continuous wave (CW) power density of 6.6 W/mm and a PAE of 37% [2].…”

Section: Introductionmentioning

confidence: 99%

Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

Moon

Wong

et al. 2005

IEEE Electron Device Lett.

115

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We report deep-submicrometer gate-recessed and field-plated AlGaN-GaN HEMTs and their state-of-the-art continuous wave (CW) power performance measured at 30 GHz. The AlGaN-GaN HEMTs exhibit a CW power density of 5.7 W/mm with a power-added efficiency (PAE) of 45% and drain-efficiency of 58% at ds = 20 V. At ds = 28 V, the output power density is measured as high as 6.9 W/mm with both PAE and output power increasing with input power level. Compared to conventional T-gated AlGaN-GaN HEMTs, the output power density and PAE of gate-recessed AlGaN-GaN HFETs are improved greatly, along with the excellent pulsed IVs. We attribute the improvement to both a field-plating effect and a vertical separation of the gate plane from surface states.Index Terms-Field-effect transistor (FET), GaN, HEMT, millimeter-wave (mmWave).

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“…Millimeter-wave MMIC high-power amplifiers have been demonstrated in GaAs and InP pHEMT technologies. A few examples of GaAs pHEMT power amplifiers are a 3-W power amplifier at 34.5 GHz [51], a 4-W power amplifier at 42.5 to 43 GHz [52], a 0.56-W power amplifier at 62.5 GHz [53], and a 0.2-W power amplifier at 113 GHz [54]. InP HEMT technology has also been used to implement a 0.4-W amplifier at 95 GHz [55].…”

Section: Iii-v-based Millimeter-wave Mmic Power Amplifiersmentioning

confidence: 99%