A 6–18 GHz GaN distributed power amplifier using reactive matching technique and simplified bias network

Park, Hongjong; Lee, Sang-Ho; Choi, Kwangseok; Kim, Jihoon; Nam, Hyosung; Kim, Jaeduk; Lee, Wangyong; Lee, Chang‐Hoon; Kim, Jung-Hyun; Kwon, Youngwoo

doi:10.1109/rfic.2017.7969101

Cited by 13 publications

(4 citation statements)

References 10 publications

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“…From Equation (10), T 1N has the maximum value T MAX_1N in Equation ( 12), and thus the transistor size also has the maximum value.…”

Section: Output Power Considerationmentioning

confidence: 99%

“…Some modifications have been used to improve the DAs' gain and power [5], including the Cascode DA [6], the stacked DAs [7,8], conventional DA-cascaded single-stage DA [9], and RM DA [10,11]. The gains have been improved, with inherent BW advantages of 36-66 GHz [5], DC−40 GHz [6], 0.5-38 GHz [7], 60-145 GHz [8], 3.7-43.7 GHz [9] and 6-18 GHz [10]. However, the PAEs are still low compared with RM PAs.…”

Section: Introductionmentioning

confidence: 99%

“…However, the efficiency is limited by the inherent loss of the artificial transmission lines in the DA; thus, the PAE is ≥ 4% [1], 6% [2], or 10% (under pulse condition) [3]. Some modifications have been used to improve the DAs' gain and power [5], including the Cascode DA [6], the stacked DAs [7,8], conventional DA-cascaded single-stage DA [9], and RM DA [10,11]. The gains have been improved, with inherent BW advantages of 36-66 GHz [5], DC−40 GHz [6], 0.5-38 GHz [7], 60-145 GHz [8], 3.7-43.7 GHz [9] and 6-18 GHz [10].…”

Section: Introductionmentioning

confidence: 99%

“…The larger the T 1N , the bigger the transistor size. Equation(10) shows that k 1N has the maximum value limited by the reciprocal of T 1N . The BW can be increased at the expense of a smaller transistor gate width and output power.…”

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confidence: 99%

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Design of 18–40 GHz GaN reactive matching power amplifiers using one‐order and two‐order synthesised transformer networks

Chen

Luo³

et al. 2021

IET Microwaves Antenna & Prop

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A reactive matching (RM) power amplifier (PA) can achieve higher efficiency than a distributed amplifier (DA). In this paper, RM PAs that cover 18-40 GHz are proposed by using one-order and two-order synthesised transformer networks (STNs) with GaN on Si technology. In this band, the PAs can provide ≥30 dBm and ≥31.9 dBm output power, with power-added efficiency (PAE) of ≥17% and ≥15% in the continuous mode, respectively. Further, STNs are analysed using the transmission poles method (TPM) instead of the resonant frequency method (RFM). Thus, the limitations of output power and bandwidth are comprehensively derived. In the one-order STN, the impedance transformation ratio (T 1N ) has a maximum value (T MAX_1N ), limiting the output power. A two-order STN is proposed, and the impedance transformation ratio maximum (T MAX_2N ) can be improved to (T MAX_1N ) 2 . The result of this paper will be helpful for wideband high-power amplifier applications.

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“…From Equation (10), T 1N has the maximum value T MAX_1N in Equation ( 12), and thus the transistor size also has the maximum value.…”

Section: Output Power Considerationmentioning

confidence: 99%