GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996
DOI: 10.1109/gaas.1996.567819
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A 560 mW, 21% power-added efficiency V-band MMIC power amplifier

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Cited by 15 publications
(5 citation statements)
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“…A power amplifier with superior performance is needed as a key device in the systems for small size, low weight, and low cost. There are many reports for V-band power amplifiers [2][3][4][5][6][7][8]. They aim to achieve higher power, efficiency, and power gain mainly.…”
Section: Introductionmentioning
confidence: 99%
“…A power amplifier with superior performance is needed as a key device in the systems for small size, low weight, and low cost. There are many reports for V-band power amplifiers [2][3][4][5][6][7][8]. They aim to achieve higher power, efficiency, and power gain mainly.…”
Section: Introductionmentioning
confidence: 99%
“…Although InP-based HEMT MMICs have demonstrated excellent power performance at -band [2], GaAs-based HEMT MMIC technology was selected for this project due to the process maturity. The 2-mil GaAs HEMT PAs not only demonstrated good power performance with high yield at -band (94 GHz) [1], but also showed impressive results from -to -band [3]- [6]. In this paper, three sets of PA chips and their driver amplifiers covering 72-81, 90-101, and 100-113 GHz were designed using microstrip lines.…”
Section: Introductionmentioning
confidence: 99%
“…1 come from literature publications of devices and amplifiers of different designs operating at room temperature. Recent representative work from the various players can be found in [1]- [7].…”
Section: Introductionmentioning
confidence: 99%