A 560 mW, 21% power-added efficiency V-band MMIC power amplifier

Tang, O.S.A.; Duh, K.H.G.; Liu, S.M.J.; Smith, P.M.; Kopp, W.; Rogers, T. J.; Pritchard, David

doi:10.1109/gaas.1996.567819

Cited by 15 publications

(5 citation statements)

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“…A power amplifier with superior performance is needed as a key device in the systems for small size, low weight, and low cost. There are many reports for V-band power amplifiers [2][3][4][5][6][7][8]. They aim to achieve higher power, efficiency, and power gain mainly.…”

Section: Introductionmentioning

confidence: 99%

A V-Band High Power and High Gain Amplifier MMIC using GaAs PHEMT Technology

Chaki

Amasuga

Goto

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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We report the performance of a V-band 5-stage high power amplifier MMIC using a millimeter-wave 0.1 μm GaAs pHEMT. It has demonstrated that an output power of 28.8 dBm (759 mW) at 1 dB compression point with 17.8 dB power gain and 14.2% PAE at 59 GHz. And it delivers an output power of 28.9 dBm (776 mW) at a saturation point. These results represent, to the best of our knowledge, the highest output power and power gain for single-ended MMICs.

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Section: Introductionmentioning

confidence: 99%

A V-Band High Power and High Gain Amplifier MMIC using GaAs PHEMT Technology

Chaki

Amasuga

Goto

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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“…Although InP-based HEMT MMICs have demonstrated excellent power performance at -band [2], GaAs-based HEMT MMIC technology was selected for this project due to the process maturity. The 2-mil GaAs HEMT PAs not only demonstrated good power performance with high yield at -band (94 GHz) [1], but also showed impressive results from -to -band [3]- [6]. In this paper, three sets of PA chips and their driver amplifiers covering 72-81, 90-101, and 100-113 GHz were designed using microstrip lines.…”

Section: Introductionmentioning

confidence: 99%

Power-amplifier modules covering 70-113 GHz using MMICs

Wang¹,

Samoska

Gaier

et al. 2001

IEEE Trans. Microwave Theory Techn.

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A set of-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST). The MMIC PA chips include three driver and three PAs, designed using microstrip lines, and another two smaller driver amplifiers using coplanar waveguides, covering the entire-band. The highest frequency PA, which covers 100-113 GHz, has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic PA chips are fabricated using 0.1-m AlGaAs/InGaAs/GaAs pseudomorphic T-gate power high electron-mobility transistors on a 2-mil GaAs substrate. The module assembly and testing, together with the system applications, will also be addressed in this paper.

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“…1 come from literature publications of devices and amplifiers of different designs operating at room temperature. Recent representative work from the various players can be found in [1]- [7].…”

Section: Introductionmentioning

confidence: 99%