2016 46th European Solid-State Device Research Conference (ESSDERC) 2016
DOI: 10.1109/essderc.2016.7599583
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A 55nm Ultra Low Leakage Deeply Depleted Channel technology optimized for energy minimization in subthreshold SRAM and logic

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Cited by 4 publications
(11 citation statements)
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“…However, with ULL DDC devices, the V th degradation with a thicker gate dielectric is relaxed by 60% compared to the conventional device at the same gate dielectric thickness as shown in Figure 5.10. Figure 5.11 shows the TEM representation of a 55nm ULL Figure 5.10: Impact of increase in Gate-Oxide (T OX ) on V th variation [11] device in DDC technology. The un-doped channel and highly doped screen layer reduce V th variation in DDC [78].…”
Section: Ddc Technologymentioning
confidence: 99%
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“…However, with ULL DDC devices, the V th degradation with a thicker gate dielectric is relaxed by 60% compared to the conventional device at the same gate dielectric thickness as shown in Figure 5.10. Figure 5.11 shows the TEM representation of a 55nm ULL Figure 5.10: Impact of increase in Gate-Oxide (T OX ) on V th variation [11] device in DDC technology. The un-doped channel and highly doped screen layer reduce V th variation in DDC [78].…”
Section: Ddc Technologymentioning
confidence: 99%
“…The ULL device using DDC further reduces leakage using an optimal selection of channel lengths combined with body biasing. Figure 5 [11] design optimization. ULL DCC is an attractive technology to address the two most pressing challenges for sub-µW systems: 1) reduced drive strength, and 2) lower yield due to V th variation.…”
Section: Ddc Technologymentioning
confidence: 99%
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