A 45–2500-MHz Push–Pull Driver PA With Cross Coupled and Negative Feedback Technique

Ren, Daming; Zou, Wei; Zhang, Kefeng; Zou, Qiming; Zou, Xuecheng; Li, Dongsheng; Ren, Zhuoxiang

doi:10.1109/lmwc.2019.2943571

Cited by 3 publications

(2 citation statements)

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“…But the value of the passive devices and the complexity of the matching network will be enhanced with the bandwidth expanding. The second way is decreasing the influence of the transistors by frequency, such as the cross-coupled structure [12,13] and the negative feedback structure [14,15]. However, the bandwidth of the proposed structure cannot be expanded indefinitely.…”

Section: Introductionmentioning

confidence: 99%

A 45–2500 MHz high efficiency power amplifier with novel adaptive bias technique

Ren

Zou

2020

IEICE Electron. Express

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The adaptive bias technique is the common technology for improving the power-added efficiency (PAE) of the power amplifier (PA). However, the performance of the adaptive bias technique is sensitive to the frequency variation. This paper presents a novel adaptive bias as the common-source bias of the 45-2500 MHz CMOS PA, which combines the subthreshold PD to decrease the effect on frequency of adaptive bias technique and a unity gain amplifier to increase the detection sensitivity, for improving the PAE at back-off mode over the wide bandwidth. The proposed PA provides a good performance from 45 MHz to 2500 MHz, while the peak of the saturation output power is 24.02 dBm over the frequency band. Moreover, the maximum PAE achieves 44.61 % at 500 MHz and the PAE is larger than 28.48 % at 3 dB back-off power. The chip size of the broadband PA achieves 1.87 mm 2 at TSMC 0.18 um technology process. It draws 200 mA from 3.3 V supply voltage.

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Section: Introductionmentioning

confidence: 99%

A 45–2500 MHz high efficiency power amplifier with novel adaptive bias technique

Ren

Zou

2020

IEICE Electron. Express

Self Cite

View full text Add to dashboard Cite

show abstract

“…Several techniques are proposed to expand the bandwidth of the PA in the past years that are classified into two categories. Decreasing the parasitic effects of MOSFET, which consists of negative feedback PA [6,7], stack PA and cross-coupled structure [8,9], is the first way. However, the bandwidth of the cross-coupled and the negative feedback structure cannot be expanded indefinitely and the output power is usually low.…”

Section: Introductionmentioning

confidence: 99%