A 40nW, Sub-IV Truly ‘Digital’ Reverse Bandgap Reference Using Bulk-Diodes in 16nm FinFET

Eberlein, Matthias; Panagopoulos, Georgios; Pretl, Harald

doi:10.1109/asscc.2018.8579306

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A 40nW, Sub-IV Truly ‘Digital’ Reverse Bandgap Reference Using Bulk-Diodes in 16nm FinFET

Cited by 9 publications

References 5 publications

Thermal Sensor and Reference Circuits Based on a Time-Controlled Bias of pn-Junctions in FinFET Technology

Thermal Sensor and Reference Circuits Based on a Time-Controlled Bias of pn-Junctions in FinFET Technology

A One-Point-Trimmed 18.4 ppm/°C On-Chip Oscillator with Capacitively-Biased-Diode-based Quasi-Digital Temperature Compensation

3.4 A 14b 98Hz-to-5.9kHz 1.7-to-50.8 μ W BW/Power Scalable Sensor Interface with a Dynamic Bandgap Reference and an Untrimmed Gain Error of ± 0.26 % from −40°C to 125°C

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