A 40GHz to 67GHz bandwidth 23dB gain 5.8dB maximum NF mm-Wave LNA in 28nm CMOS

Hadipour, Kambiz; Ghilioni, Andrea; Mazzanti, Andrea; Bassi, Matteo; Svelto, F.

doi:10.1109/rfic.2015.7337771

Cited by 15 publications

(7 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…According to this idea, in multistage amplifiers, the interstage resonant circuit of amplifier generates different resonant frequencies f L and f H , and the central frequencies of each amplifier are distributed near f L and f H ; after the connection, the frequency response is relatively flat under broadband 8 . Many results show that the stagger tuning technology can effectively improve the bandwidth of multistage LNA, and it is often used in the design of high band broadband LNA 9–11 …”

Section: Bandwidth Expansion Technologymentioning

confidence: 99%

A fusion bandwidth extension technique for broadband low‐noise amplifier

Wang

Lai³

2023

Circuit Theory & Apps

View full text Add to dashboard Cite

SummaryWideband low‐noise amplifiers (LNAs) are widely used in 5G and 6G communication systems. This paper first analyzes two common bandwidth extension technologies: the stagger tuning technique and the magnetically coupled resonators (MCR) technique. Then, a four‐stage LNA based on double‐tuned transformer combined with stagger tuning idea and MCR idea was proposed. In order to improve the broadband characteristics of the LNA, the loose coupling double‐tuned transformer is carefully designed. Compared with the traditional stagger tuning LNA, it has better broadband characteristics, lower element error sensitivity, and lower design complexity. This designs a gain bandwidth product of 1.48 T with a −3‐dB bandwidth in 9.11 GHz and the noise factor is lower than 3 dB, which covers more than 45% −3‐dB fractional bandwidth. The LNA consumes 37‐mW power with a 1.1‐V supply and occupies 1.22 × 0.4 mm2.

show abstract

Section: Bandwidth Expansion Technologymentioning

confidence: 99%

A fusion bandwidth extension technique for broadband low‐noise amplifier

Wang

Lai³

2023

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…For the output stage, unlike the previous discussion, the resistor on both is about the same. We can simply use symmetrical MCR (α=β=1) for matching operation, which has been well studied preciously in [22,23,24,25]. The parameters of the inter and output stage MCR network are shown in Table Ι.…”

Section: Circuit Designmentioning

confidence: 99%

A K-band broadband low noise amplifier with 18.8dB gain and -13dBm IP<sub>1dB</sub> in 0.13-µm CMOS

Sun

et al. 2022

IEICE Electron. Express

View full text Add to dashboard Cite

A K-band CMOS broadband low noise amplifier (LNA) based on the magnetically coupled resonator (MCR) matching network technique is presented and implemented in 0.13-μm CMOS technology. Such LNA consists of two common-source (CS) pseudo-differential stages, which use the capacitive neutralization technique to enhance the inversion isolation and Gain. The MCR-based input matching network achieves good balance and loss performance by inventing a compensated capacitor and series resistor loaded at the center point of the transformer's second coil, which improves the linearity and Noise Figure (NF) of the LNA. The measurement NF is 3.7-5.6 dB within the frequency range of 20.9-26.2 GHz (BW3dB), and the peak gain is 18.8 dB. The measured IP1dB is -13dBm at 24 GHz with a power consumption of 18 mW under 1.2 V supply.

show abstract

“…Many efforts have been made to improve the bandwidth without sacrifacing the noise figure, gain, and power consumption. Single-peak staggering technique has been used in [6] to increase the bandwidth of a LNA. In the LNA, the resonant frequencies of each stage are evenly distributed, therefore creating an overall broadband total gain.…”

Section: Introductionmentioning

confidence: 99%

A 19.6–39.4 GHz Broadband Low Noise Amplifier Based on Triple-Coupled Technique and T-Coil Network in 65-nm CMOS

Wan

Han

et al. 2022

Electronics

View full text Add to dashboard Cite

This paper presents a differential 19.6–39.4 GHz broadband low-noise amplifier (LNA) in 65-nm CMOS technology. The LNA consists of two cascode stage and one common-source stage. To achieve a wide bandwidth and low average noise figure, inter-stage peak-gain distribution technique and transformer-based triple-coupled technique are developed. Besides, a new compact T-coil-based network is proposed to neutralize the parasitic capacitors and enlarge the gain. The measure results show that the 3-dB bandwidth is from 19.6 to 39.4 GHz, the maximum gain is 23.5 dB, and the noise figure (NF) is from 3.7 to 5.8 dB. The dc power comsumption is 46 mW with 1V supply voltage. The input P1dB is −17 dBm at 30 GHz.

show abstract

A 40GHz to 67GHz bandwidth 23dB gain 5.8dB maximum NF mm-Wave LNA in 28nm CMOS

Cited by 15 publications

References 8 publications

A fusion bandwidth extension technique for broadband low‐noise amplifier

A fusion bandwidth extension technique for broadband low‐noise amplifier

A K-band broadband low noise amplifier with 18.8dB gain and -13dBm IP<sub>1dB</sub> in 0.13-µm CMOS

A 19.6–39.4 GHz Broadband Low Noise Amplifier Based on Triple-Coupled Technique and T-Coil Network in 65-nm CMOS

Contact Info

Product

Resources

About