A 40 to 160 GHz high power multiplier chain using planar Schottky diodes

Liu, Hairui; Powell, Jeff R.; Viegas, Colin; Pérez-Moreno, Carlos G.; Alderman, Byron

doi:10.1109/ucmmt.2015.7460617

Cited by 7 publications

(4 citation statements)

References 4 publications

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“…A comprehensive comparison of the designed frequency doubler with the multipliers reported in the literature is given in Table 3. Compared with the tripler [24] and the doublers [25,26,27] working under external bias, the proposed doubler had a larger fractional bandwidth. Although a record full waveguide bandwidth of 44% was obtained by the doubler working under zero bias in ref.…”

Section: Resultsmentioning

confidence: 99%

“…Frequency multipliers mainly focus on the performance of efficiency, output power and bandwidth, and various state-of-the-art multipliers [22,23,24,25,26,27,28,29,30,31,32] based on planar Schottky barrier diodes that have been designed and demonstrated in recent years. Though frequency multipliers like in [22,23] eliminate possible assembly errors and feature better consistency with microwave monolithic integrated circuit (MMIC) technology, the discrete diodes [24,25,26,27,28,29,30,31,32] are also applied for its low cost and reliable alignment process when the frequency is below 400 GHz [27]. From the perspective of bias approaches, all these frequency multipliers mostly work at zero bias or external reverse bias.…”

Section: Introductionmentioning

confidence: 99%

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A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky Diodes

Zhang

Cui

et al. 2019

Micromachines

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This paper describes the design and demonstration of a 135–190 GHz self-biased broadband frequency doubler based on planar Schottky diodes. Unlike traditional bias schemes, the diodes are biased in resistive mode by a self-bias resistor; thus, no additional bias voltage is needed for the doubler. The Schottky diodes in this verification are micron-scaled devices with an anode area of 6.6 μm2 and an epitaxial layer thickness of 0.26 μm. For accurate design of the doubler, the 3D-EM model of the Schottky diode is built up to extract the parasitic parameters induced by the diode package when frequency rises up to the terahertz band. In order to implement broadband working, input waveguide steps, output suspended microstrip steps, and output probe with bias filter are all used as matching elements for impedance matching. Measured results show that the doubler exhibits a 3 dB bandwidth of 34% from 135 GHz to 190 GHz, with a conversion efficiency of above 4% when supplied with 100 mW of input power. A 17.8 mW peak output power with a 10.2% efficiency was measured at 166 GHz when the input power was 174 mW. The measured results agree well with the simulated results, which indicates that the self-bias scheme for Schottky diode-based frequency multipliers is feasible and effective.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky Diodes

Zhang

Cui

et al. 2019

Micromachines

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“…In addition, Jeff Powell et al . have reported a 160 GHz high power doubler [ 89, 90 ] , 40 GHz to 80 GHz, and 80 GHz to 160 GHz high power doublers [ 91 ] . In 2013, Yao Changfei et al .…”

Section: Flip‐chip Based Multipliersmentioning

confidence: 99%

“…When the input power was 25 mW, the maximum output power was close to 1.2 mW. In addition, Jeff Powell et al have reported a 160 GHz high power doubler [89,90] , 40 GHz to 80 GHz, and 80 GHz to 160 GHz high power doublers [91] . In 2013, Yao Changfei et al from the 55th Research Institute of China Electronics Technology Group reported a high-efficiency frequency doubler in 190-225 GHz frequency band [92] .…”

Section: Balanced Frequency Doublersmentioning

confidence: 99%

A Review of Terahertz Sources Based on Planar Schottky Diodes

Kou

Liang

Zhou

et al. 2022

Chinese J of Electronics

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The special position of terahertz wave in the electromagnetic spectrum makes it possess the characteristics of orientation, broadband, penetration and low energy, which promotes the extensive research of terahertz wave in the fields of communication, radar, imaging, sensing, security inspection and so on. The solid-state terahertz sources based on semiconductor devices have attracted extensive attention in the field of terahertz information technology due to their characteristics such as being able to work at room temperature, being small in size, being easy to integrate and having good frequency stability. Terahertz planar Schottky diode is a kind of low parasitic semiconductor device. Its high cutoff frequency makes it work well in the terahertz range. The frequency multiplier based on planar Schottky diode is an important part of terahertz solid state source. In this review, the development of Schottky diodes technology in recent years have been introduced, including the structures and preparation of Schottky diodes. In addition, the current situation and performance of different types of terahertz sources based on Schottky diodes are further introduced, and the future development trend is discussed.

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A 220 GHz High-Efficiency Doubler Based on Function-Based Harmonic Impedance Optimization Method

Liu

Zhang

et al. 2022

J Infrared Milli Terahz Waves

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A 40 to 160 GHz high power multiplier chain using planar Schottky diodes

Cited by 7 publications

References 4 publications

A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky Diodes

A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky Diodes

A Review of Terahertz Sources Based on Planar Schottky Diodes

A 220 GHz High-Efficiency Doubler Based on Function-Based Harmonic Impedance Optimization Method

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