A 40 nW CMOS-Based Temperature Sensor with Calibration Free Inaccuracy within ±0.6 °C

Chouhan, Shailesh Singh; Halonen, K.

doi:10.3390/electronics8111275

Cited by 5 publications

(4 citation statements)

References 31 publications

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“…To guarantee accurate pulse widths of the residues, the size of each delay unit in the PGTA is exactly as same as that in the CTDC. The OR gate sums the pulses (from ɛ [1] to ɛ[M]) and generates a serial signal composed of M residues in which each single pulse width is ɛ. Therefore, the residue is amplified by M times.…”

Section: Pgtamentioning

confidence: 99%

“…A smart temperature sensor is one of the most commonly desired parts in Internet of Things (IoT) devices to monitor either environment or chip conditions [1]. The temperature sensors that have high energy efficiency and are of low cost can be used in many BIoT applications, for example, the preservation and transport of vaccines, medicines, blood samples, and other medical samples that should be placed in a certain temperature range.…”

Section: Introductionmentioning

confidence: 99%

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A Pipeline-TDC-Based CMOS Temperature Sensor with a 48 fJ·K2 Resolution FoM

et al. 2021

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An energy-efficient temperature sensor is important for temperature monitoring in Biomedical Internet-of-things (BIoT) applications. This article presents a time-domain temperature sensor with a pipeline time-to-digital converter (TDC). A programmable-gain time amplifier (PGTA) with high linearity and wide linear range is proposed to improve the resolution of the sensor and to reduce the chip area. The conversion time of the sensor is reduced by the fast TDC that only needs ~26 ns/conversion, which means the sensor is suitable for BIoT applications that commonly use duty cycling mode. Fabricated in a 40 nm standard CMOS technology, the sensor consumes 7.6 μA at a 0.6 V supply and achieves a resolution of 90 mK and a sensitivity of 0.62%/°C in a 1.3 μs conversion time. This translates into a resolution figure-of-merit of 48 fJ·K2. The sensor achieves an inaccuracy of 0.39 °C from −20 °C to 80 °C after two-point calibration. Duty cycling the sensor results in an even lower average power: ~18.6 nW at 10 conversions/s.

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Section: Pgtamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Pipeline-TDC-Based CMOS Temperature Sensor with a 48 fJ·K2 Resolution FoM

et al. 2021

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“…In Figure 8 , the delay lines can be implemented in various ways. One of them is to use a proportional to the absolute temperature (PTAT) and a complementary to the absolute temperature (CTAT) signals [ 88 , 89 , 90 , 91 , 92 , 93 , 94 ]. If the PTAT and CTAT voltages are generated by the NMOS transistors operating in the subthreshold region as shown in Figure 9 , the PTAT and CTAT voltages can be represented as follows.…”

Section: Characterizationmentioning

confidence: 99%

Categorization and Characterization of Time Domain CMOS Temperature Sensors

Byun

2020

Sensors

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Time domain complementary metal-oxide-semiconductor (CMOS) temperature sensors estimate the temperature of a sensory device by measuring the frequency, period and/or delay time instead of the voltage and/or current signals that have been traditionally measured for a long time. In this paper, the time domain CMOS temperature sensors are categorized into twelve types by using the temperature estimation function which is newly defined as the ratio of two measured time domain signals. The categorized time domain CMOS temperature sensors, which have been published in literature, show different characteristics respectively in terms of temperature conversion rate, die area, process variation compensation, temperature error, power supply voltage sensitivity and so on. Based on their characteristics, we can choose the most appropriate one from twelve types to satisfy a given specification.

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“…Due to their small form factor, low power consumption, low cost and convenient digital interface capability, integrated temperature sensor chips have been widely used for thermal monitoring in various smart applications such as the smart farm, smart factory, smart health, and so on. Integrated temperature sensor chips can be implemented in various ways depending on the sensing element which is generally chosen from the threshold voltage, mobility, resistance or thermal voltage; the measured signal type, which is generally chosen from the voltage, current, frequency, or delay time; and the overall architecture which is basically determined by the chosen sensing element and the measured signal type [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 ].…”

Section: Introductionmentioning

confidence: 99%

A 0.026 mm2 Time Domain CMOS Temperature Sensor with Simple Current Source

Park

Byun

2020

Micromachines

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This paper presents a time domain CMOS temperature sensor with a simple current source. This sensor chip only occupies a small active die area of 0.026 mm2 because it adopts a simple current source consisting of an n-type poly resistor and a PMOS transistor and a simple current controlled oscillator consisting of three current starved inverter delay cells. Although this current source is based on a simple architecture, it has better temperature linearity than the conventional approach that generates a temperature-dependent current through a poly resistor using a feedback loop. This temperature sensor is designed in a 0.18 μm 1P6M CMOS process. In the post-layout simulations, the temperature error was measured within a range from −1.0 to +0.7 °C over the temperature range of 0 to 100 °C after two point calibration was carried out at 20 and 80 °C, respectively. The temperature resolution was set as 0.32 °C and the temperature to digital conversion rate was 50 kHz. The energy efficiency is 1.4 nJ/sample and the supply voltage sensitivity is 0.077 °C/mV at 27 °C while the supply voltage varies from 1.65 to 1.95 V.

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A 40 nW CMOS-Based Temperature Sensor with Calibration Free Inaccuracy within ±0.6 °C

Cited by 5 publications

References 31 publications

A Pipeline-TDC-Based CMOS Temperature Sensor with a 48 fJ·K2 Resolution FoM

A Pipeline-TDC-Based CMOS Temperature Sensor with a 48 fJ·K2 Resolution FoM

Categorization and Characterization of Time Domain CMOS Temperature Sensors

A 0.026 mm2 Time Domain CMOS Temperature Sensor with Simple Current Source

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