A 40–67 GHz Power Amplifier With 13 dBm ${\rm P}_{\rm SAT}$ and 16% PAE in 28 nm CMOS LP

Bassi, Matteo; Zhao, Jin; Bevilacqua, Andrea; Ghilioni, Andrea; Mazzanti, Andrea; Svelto, F.

doi:10.1109/jssc.2015.2409295

Cited by 78 publications

(14 citation statements)

References 20 publications

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“…1). This remarkably simple transformation gives direct insight into the effect of the transformer parameters on the frequency response of the filter and leads to a gain-BW extension similar to what reported in [6,7], with no need for a more involved Norton transformation. Fig.…”

Section: Introductionmentioning

confidence: 64%

A 29-to-57GHz AM-PM compensated class-AB power amplifier for 5G phased arrays in 0.9V 28nm bulk CMOS

Vigilante

Reynaert

2017

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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Abstract-This paper presents a 29-to-57GHz (65% BW) AM-PM compensated class-AB power amplifier tailored for 5G phased arrays. Designed in 0.9V 28nm CMOS without RF thick top metal, the PA achieves a Psat=15.1dBm±1.6dB and │AM-PM│<1° from 29-to-57GHz, with a peak PAE of 24.2%. Techniques are studied to realize the required load impedance and distortion cancellation over the wide band of operation, while allowing 2-way power combining to further increase the delivered POUT. The very low AM-PM distortion of the realized PA enables up to 10.1, 8.9, 5.9dBm average POUT while amplifying a 1.5, 3, 6Gb/s 64-QAM respectively at 34GHz with EVM/ACPR better than -25dBc/-30dBc, without any digital pre-distortion.Index Terms-5G mobile communication, power amplifiers, AM-PM, broadband, wideband, coupled resonators, gain-bandwidth product, GBW, mm-Wave, CMOS. I. INTRODUCTIONThe frequency spectrum above 24GHz will be a key enabler for future Gb/s fifth generation (5G) wireless communication systems [1,2]. To maximize the data rate, high order modulation schemes (e.g. 64-QAM) with large RF bandwidth (>100MHz) will be adopted. At the transmitter side, this implies several design challenges. 1) A wideband PA is needed to cover several channels, amplify wideband signals and ensure robust performance against PVT variations. 2) Modulated signals with high spectral efficiency show large peak-to-average-powerratio, challenging the linearity vs. efficiency trade-off for a given average P OUT . 3) Digital pre-distortion is not easily applicable when several PAs are integrated in an array [1]. Therefore, techniques to compensate AM-PM distortion over a large bandwidth are desirable to improve both inband and out-of-band linearity (i.e. EVM and ACPR).Recently, the work in [1] has shown the feasibility of 28GHz CMOS PAs with outstanding efficiency. However, the BW, average P OUT and ACPR under modulated signal considerably limit the achievable link distance and coexistence with adjacent channels. 2

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Section: Introductionmentioning

confidence: 64%

A 29-to-57GHz AM-PM compensated class-AB power amplifier for 5G phased arrays in 0.9V 28nm bulk CMOS

Vigilante

Reynaert

2017

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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“…For the combined four 4 � 50 μm transistors (W Gate = 800 μm) in the last stage, R 1_2N and C 1_2N are 14 Ω and 0.512 pF. From Equation ( 18 6) and (18). As shown in Figures 8 and 9, the frequency responses are similar to those of a microwave filter.…”

Section: Bw and Output Power Considerationmentioning

confidence: 72%

Design of 18–40 GHz GaN reactive matching power amplifiers using one‐order and two‐order synthesised transformer networks

Chen

Luo³

et al. 2021

IET Microwaves Antenna & Prop

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A reactive matching (RM) power amplifier (PA) can achieve higher efficiency than a distributed amplifier (DA). In this paper, RM PAs that cover 18-40 GHz are proposed by using one-order and two-order synthesised transformer networks (STNs) with GaN on Si technology. In this band, the PAs can provide ≥30 dBm and ≥31.9 dBm output power, with power-added efficiency (PAE) of ≥17% and ≥15% in the continuous mode, respectively. Further, STNs are analysed using the transmission poles method (TPM) instead of the resonant frequency method (RFM). Thus, the limitations of output power and bandwidth are comprehensively derived. In the one-order STN, the impedance transformation ratio (T 1N ) has a maximum value (T MAX_1N ), limiting the output power. A two-order STN is proposed, and the impedance transformation ratio maximum (T MAX_2N ) can be improved to (T MAX_1N ) 2 . The result of this paper will be helpful for wideband high-power amplifier applications.

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“…The proposed FBGC-based BW expansion technique provides a new and efficient solution for ultra-wideband PAs in FMCW-based ultra-high resolution 2D/3D imaging system or other multi-mode/multiband application scenarios. [5] JSSC' 19 [6] TCAS-I' 14 [7] JSSC' 18 [8] TMTT' 16 [9] TMTT' 15 [10] JSSC' 15 [11] TMTT' 13 [12] This work *FoM = Pout(W) x Gain(abs) x PAE x Freq 2 (GHz) x Frac.BW [5]…”

Section: Discussionmentioning

confidence: 99%

A Gm-Compensated 46-101 GHz Broadband Power Amplifier for High-Resolution FMCW Radars

Wang

Shen

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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GHz broadband power amplifier (PA) for high-resolution FMCW radars is presented in this paper. For bandwidth (BW) expanding, a Gm compensator-based negative feedback chain is applied to the PA, compensating the large gain ripple caused by a high-k transformer (TF)-based ultra-wideband interstage matching network (IMN). Based on the proposed Gm-compensated technique, a flat and ultra-wideband power gain of the PA can be obtained with the high-k TF-based IMN. The proposed PA achieves a 55-GHz BW without additional area overhead and efficiency loss. 74.8% of the fractional BW is obtained with <0.3 dB gain ripple in 53-92 GHz. The PA reaches 17.1 dBm Psat and 27% peak PAE respectively, and the core area of the proposed PA in TSMC 40nm CMOS process is 0.1mm 2 .

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A 40–67 GHz Power Amplifier With 13 dBm ${\rm P}_{\rm SAT}$ and 16% PAE in 28 nm CMOS LP

Cited by 78 publications

References 20 publications

A 29-to-57GHz AM-PM compensated class-AB power amplifier for 5G phased arrays in 0.9V 28nm bulk CMOS

A 29-to-57GHz AM-PM compensated class-AB power amplifier for 5G phased arrays in 0.9V 28nm bulk CMOS

Design of 18–40 GHz GaN reactive matching power amplifiers using one‐order and two‐order synthesised transformer networks

A Gm-Compensated 46-101 GHz Broadband Power Amplifier for High-Resolution FMCW Radars

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