A 4.5 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="mml11" display="inline" overflow="scroll" altimg="si2.gif"><mml:mi mathvariant="normal">μ</mml:mi></mml:math>m PIN diamond diode for detecting slow neutrons

Holmes, Jason; Dutta, Maitreya; Koeck, Franz A.; Benipal, Manpuneet; Brown, Jesse; Fox, Benjamin D.; Hathwar, Raghuraj; Johnson, H. M.; Malakoutian, Mohamadali; Saremi, Mehdi; Zaniewski, Anna; Alarcón, R.; Chowdhury, Srabanti; Goodnick, Stephen M.; Nemanich, R. J.

doi:10.1016/j.nima.2018.06.061

Cited by 27 publications

(8 citation statements)

References 10 publications

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“…The field of CVD diamonds is rapidly maturing into one wherein new applications and products are being developed [ 1 , 2 ]. It is a currently emerging technology with immense promise for innovative, convenient, and high-performance electronics.…”

Section: Introductionmentioning

confidence: 99%

The n–Si/p–CVD Diamond Heterojunction

et al. 2020

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Due to the possible applications, materials with a wide energy gap are becoming objects of interest for researchers and engineers. In this context, the polycrystalline diamond layers grown by CVD methods on silicon substrates seem to be a promising material for engineering sensing devices. The proper tuning of the deposition parameters allows us to develop the diamond layers with varying crystallinity and defect structure, as was shown by SEM and Raman spectroscopy investigations. The cathodoluminescence (CL) spectroscopy revealed defects located just in the middle of the energy gap of diamonds. The current–voltage–temperature, I−V−T characteristics performed in a broad temperature range of 77–500 K yielded useful information about the electrical conduction in this interesting material. The recorded I−V−T in the forward configuration of the n–Si/p–CVD diamond heterojunction indicated hopping trough defects as the primary mechanism limiting conduction properties. The Ohmic character of the carriers flux permitting throughout heterojunction is intensified by charges released from the depletion layer. The magnification amplitude depends on both the defect density and the probability that biasing voltage is higher than the potential barrier binding the charge. In the present work, a simple model is proposed that describes I−V−T characteristics in a wide range of voltage, even where the current saturation effect occurs.

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Section: Introductionmentioning

confidence: 99%

The n–Si/p–CVD Diamond Heterojunction

et al. 2020

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“…Wide band gap materials (e.g., silicon carbide (SiC), gallium nitride (GaN), and diamond) have recently attracted a lot of interest for high power and high temperature applications [3][4][5][6][7][8]. SiC-based power devices have been already commercialized for high-voltage and high-power application [9,10]; diamond is another promising candidate [11,12]. Among all of these wide bandgap semiconductor material, GaN has a higher electron mobility than SiC and higher critical electric field than Si [13].…”

Section: Introductionmentioning

confidence: 99%

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

et al. 2019

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Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

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“…At present, most power semiconductor devices are fabricated from Si materials, but as the process progresses, the performance of Si devices is approaching the material limit. Therefore, wide-bandgap semiconductor materials such as diamond [1,2], SiC [3,4], and GaN [5] have become promising candidates to make high power semiconductor devices. These wide-bandgap semiconductor materials have a high breakdown field [2], high thermal conductivity [6,7], and an extremely low intrinsic carrier concentration at room temperature, which can make power devices with high potential figures of merit [2].…”

Section: Introductionmentioning

confidence: 99%

A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer

et al. 2019

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In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination (GET SBD) were simulated and compared using a Technology Computer Aided Design (TCAD) tool. The results proved that the breakdown voltage (VBK) in the proposed structure was tremendously improved when compared to the GET SBD. This enhancement is attributed to the suppression of the anode tunneling current by the T-anode and the redistribution of the electric field in the anode–cathode region induced by the field plates (FPs). Moreover, the T-anode had a negligible effect on the two-dimensional electron gas (2DEG) in the channel layer, so there is no deterioration in the forward characteristics. After being optimized, the proposed structure exhibited a low turn-on voltage (VT) of 0.53 V and a specific on-resistance (RON,sp) of 0.32 mΩ·cm2, which was similar to the GET SBD. Meanwhile, the TAI-BBF FP SBD with an anode-cathode spacing of 5 μm achieved a VBK of 1252 V, which was enhanced almost six times compared to the GET SBD with a VBK of 213 V.

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A 4.5 μm PIN diamond diode for detecting slow neutrons

Cited by 27 publications

References 10 publications

The n–Si/p–CVD Diamond Heterojunction

The n–Si/p–CVD Diamond Heterojunction

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer

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