2015 Symposium on VLSI Circuits (VLSI Circuits) 2015
DOI: 10.1109/vlsic.2015.7231255
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A 4.35Gb/s/pin LPDDR4 I/O interface with multi-VOH level, equalization scheme, and duty-training circuit for mobile applications

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Cited by 17 publications
(5 citation statements)
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“…The proposed transmitter consists of amplifier (AMP), divider (DIV), phase controller, quadrature clock correctors, serializers, external duty cycle detectors (External DCDs) and output drivers (DRVs). The transmitter of DRAM interface [2], [3] has four channel, which consists of 8 data paths and 1 data strobe path. Each channel is synchronized by same clock signal in the conventional transmitter.…”
Section: Circuit Descriptionmentioning
confidence: 99%
“…The proposed transmitter consists of amplifier (AMP), divider (DIV), phase controller, quadrature clock correctors, serializers, external duty cycle detectors (External DCDs) and output drivers (DRVs). The transmitter of DRAM interface [2], [3] has four channel, which consists of 8 data paths and 1 data strobe path. Each channel is synchronized by same clock signal in the conventional transmitter.…”
Section: Circuit Descriptionmentioning
confidence: 99%
“…As the memory bandwidth required for mobile devices and computing systems for big data processing such as cloud computing and artificial intelligence (AI) increases, the operating frequency of the memory I/O link is continuously increasing. Recent high-speed DRAMS [1,2,5,6,7,8,9,10] and memory controllers [3,4] operating above multi-Gbps demand very precise 50% on-chip duty-cycle clocks to improve timing margins. However, the clock duty-cycle of a memory system is distorted by impedance mismatches, dispersion and crosstalk noise that occur in memory interface channels operating above multiple GHz.…”
Section: Introductionmentioning
confidence: 99%
“…To eliminate the clock duty-cycle errors in memory interface channels, input clock buffers, and on-chip clock trees, typical high-speed DRAM and memory controllers utilize analog-type, digital-type or hybrid-type duty-cycle corrector (DCC) circuits [1,2,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20]. The DCCs in DDR3, DDR4, LPDDR4, LPDDR5, and GDDR5 SDRAM applications performs duty-cycle error compensation of high-speed signal pins for a differential clock (CK/CKb), data signals (DQs), and a data strobe signal (DQS).…”
Section: Introductionmentioning
confidence: 99%
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