2010 IEEE International 3D Systems Integration Conference (3DIC) 2010
DOI: 10.1109/3dic.2010.5751446
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A 3D SoC design for H.264 application with on-chip DRAM stacking

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Cited by 19 publications
(17 citation statements)
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“…Zhang et al [2010] proposed a parallel-access mechanism in which two separate DDR Finite State Machines (FSMs) are used to control eight memory channels of a 3D-DRAM. The proposed architecture by Loi and Benini [2010] has every processing element allocated to its own local DRAM channel with a memory controller, and a custom crossbar is used to route incoming traffic from other processing elements.…”
Section: Related Workmentioning
confidence: 99%
“…Zhang et al [2010] proposed a parallel-access mechanism in which two separate DDR Finite State Machines (FSMs) are used to control eight memory channels of a 3D-DRAM. The proposed architecture by Loi and Benini [2010] has every processing element allocated to its own local DRAM channel with a memory controller, and a custom crossbar is used to route incoming traffic from other processing elements.…”
Section: Related Workmentioning
confidence: 99%
“…The use of through silicon vias (TSVs) or monolithic interdie vias enables heterogeneous stacking of multiple dice with very large bandwidth and low energy communication, which improves system performance [2], [3]. However, there are thermal challenges and potential show stoppers due to higher total power density and larger thermal resistance for the dice within the stack [4], [5].…”
Section: -D Integration Is An Emerging Technology To Addressmentioning
confidence: 99%
“…A 64-core processor [11] with stacked memory was designed; its maximum throughput is 63.8 GB/s. Zhao et al [12] introduced a five-tier stacked H.264 application using on-chip DRAM stacking. Although memory power is not given in [12], we can figure it out by [13] using the characteristics given in [12].…”
Section: Introductionmentioning
confidence: 99%
“…Zhao et al [12] introduced a five-tier stacked H.264 application using on-chip DRAM stacking. Although memory power is not given in [12], we can figure it out by [13] using the characteristics given in [12]. Thus, the memory power is 492.5 mW, which is still considerably high.…”
Section: Introductionmentioning
confidence: 99%