A 38/77 GHz MMIC transmitter chip set for automotive applications

Udomoto, J.; Matsuzuka, Takayuki; Chaki, S.; Kanaya, K.; Katoh, Takayuki; Notani, Y.; Hisaka, T.; Oku, Tatsuya; Ishikawa, T.; Komaru, M.; Matsuda, Yoshihisa

doi:10.1109/mwsym.2003.1210608

Cited by 13 publications

(5 citation statements)

References 5 publications

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“…AlGaAs/InGaAs PHEMTs are being widely used for high frequency applications such as automotive radars and satellite communications [1][2][3],,direct broadcast satellite (DBS) and cellular phones. Recently, the demand of low cost AlGaAs/InGaAs PHEMTs with keeping high frequency performance is emerging for these applications.…”

Section: Introductionmentioning

confidence: 99%

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions

Hisaka

Sasaki

Nogami

et al. 2009

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions

Hisaka

Sasaki

Nogami

et al. 2009

Microelectronics Reliability

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“…AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) have recently come into use for highfrequency applications such as automotive radars and satellite communications, [1][2][3] in addition to their conventional applications such as direct-broadcast satellites (DBSs) and cellular phones. For these applications, there is increasing demand for high performance and low-cost AlGaAs/ InGaAs PHEMTs.…”

Section: Introductionmentioning

confidence: 99%

Degradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation

Hisaka¹,

Nogami²,

Sasaki³

et al. 2008

jjap

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We have comprehensively investigated the degradation mechanism of output power in AlGaAs/InGaAs pseudomorphic highelectron-mobility transistors (PHEMTs) under large-signal operation. The degradation of output power is caused by the decrease in maximum drain current (I max ) around the knee voltage (V k ) with an increase in drain resistance (R d ). The decrease in I max originates from a degradation layer containing a significant amount of oxygen formed at the drain recess surface region. This layer causes a reduced carrier density in the drain region underneath, resulting in a decreased I max and an increased R d . The decrease in I max is accelerated with increasing drain voltage, temperature, and humidity. These results suggest that the degradation of output power in the PHEMTs is mainly determined by the growth of a corrosion layer owing to an electrochemical reaction between O 2 and/or H 2 O and the semiconductor surface. We successfully suppress the output power degradation due to this electrochemical corrosion reaction with the help of a special surface treatment prior to the deposition of a passivation film on the recess surface. We demonstrate a highly reliable RF operation of PHEMTs in air even without a hermetic package.

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“…To decrease the assembly cost, each MMIC such as the oscillator and the amplifier should be integrated to a single chip. In the reported GaAs-MMICs, the HBT process, which can suppress 1/f noise, is employed for oscillators whereas the HEMT process is used for amplifiers and multipliers because of the high gain characteristics at the millimeter wave band [1][2][3][4][5][6]. As just described, an RF front-end consists of some MMICs because of different processes.…”

Section: Introductionmentioning

confidence: 99%

A Low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars

Kanaya

Amasuga

Watanabe

et al. 2010

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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To develop a low 1/f noise and high reliability InP/GaAsSb DHBT, experimental analyses on the recombination current have been carried out. The results show that the recombination current that can affect 1/f noise and reliability originates from the surface of the base. We have optimized the ledge and passivation film on the base surface of InP/GaAsSb DHBT. The optimized DHBT offers 7 dB lower 1/f noise level than the non-optimized DHBT. Additionally, in the high temperature burn-in test, no degradation has been induced even after 1,000 hr. It can satisfy the criterion of automotive radars. The W-band oscillator with the optimized DHBT delivers a remarkably low phase noise of -107 dBc/Hz at 1MHz-offset. This phase noise is 10 dB lower than that of the non-optimized HBT oscillator. These results experimentally confirm that decreasing 1/f noise is effective for the design of a low phase noise oscillator using InP/GaAsSb DHBT.To our knowledge, this is the first report to reveal that the base surface structure of InP/GaAsSb DHBT is a key factor in the improvement of reliability and phase noise.

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A 38/77 GHz MMIC transmitter chip set for automotive applications

Cited by 13 publications

References 5 publications

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions

Degradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation

A Low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars

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