A 37-Gb/s Monolithically Integrated Electro-Optical Transmitter in a Silicon Photonics 250-nm BiCMOS Process

Giuglea, Alexandru; Belfiore, Guido; Khafaji, Mohammad Mahdi; Henker, Ronny; Ellinger, Frank

doi:10.1109/jlt.2021.3133668

Cited by 7 publications

(3 citation statements)

References 13 publications

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“…Monolithic integration of optical lasers and gain has been a goal in the silicon photonics industry for the past ten years. 102 The achievement of this goal is a constraint with distinct problems, namely: (a) variation in the coefficients of thermal expansion increases to strain cracking and fault migration throughout cooldown; (b) a Si substrate was used to synthesize a polar compound with anti-phase domains. 103 The first constraints can be mainly overcome by better templates and greater containment in the separate heterostructure of the containment (SCH), which in the past lowered the overall epitaxial thickness from 8 μm to merely 4 μm.…”

Section: Future Perspectivementioning

confidence: 99%

Silicon photonics interfaced with microelectronics for integrated photonic quantum technologies: a new era in advanced quantum computers and quantum communications?

et al. 2023

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Section: Future Perspectivementioning

confidence: 99%

Silicon photonics interfaced with microelectronics for integrated photonic quantum technologies: a new era in advanced quantum computers and quantum communications?

et al. 2023

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“…It has been considered to be the most promising technology to deal with the ever-increasing network traffic [1][2][3]. Various integrated photonic devices or systems have been developed and optimized in recent years, such as silicon photonics switches [4], electro-optical modulators [5][6][7], photodetectors [8][9][10] and silicon photonic transceivers [11][12][13][14][15][16][17]. For real-world applications, optical interconnections between fibers and silicon photonic chips are crucial as high fiber-tochip coupling loss limits the performance of optical communication systems.…”

Section: ⅰ Introductionmentioning

confidence: 99%

Broadband Polarization-Independent Edge Couplers With High Efficiency Based on SiN-Si Dual-Stage Structure

Jiang,

Zhang,

Liu

2024

IEEE Photonics J.

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Silicon nitride (SiN) plays a critical role in silicon photonics because of its lower refractive index, low waveguide loss, broad operating bandwidth and compatibility with complementary metal oxide semiconductor (CMOS) fabrication process. Here, we propose a polarization-independent subwavelength grating (SWG) edge coupler with high efficiency based on SiN-Si dual-stage structure with a length of only 315.8 μm. Such a structure can be fabricated on 8-inch silicon photonics pilot lines and doesn't require special fabrication processes for making it suspended. We simulate the minimum TE/TM light coupling loss from a standard SMF-28 fiber to be 0.61 dB/0.95 dB with polarization dependent loss (PDL) less than 0.4 dB in the whole band between 1500 nm and 1600 nm.

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“…Due to their low optical bandwidth, both the EAMs and the ring modulators are sensitive to process and temperature variations and exhibit chirping [13] [14]. Silicon or lithium niobate MZMs compensate these drawbacks, however at the cost of a large chip footprint or high requirements regarding the output voltage swing of the driver [15].…”

Section: Introductionmentioning

confidence: 99%

A High-Speed 130-nm SiGe BiCMOS Integrated Duobinary Driver for Data Rate Capacity Enhancement in VCSEL-Based Optical Links

Giuglea,

Belfiore,

Protze

et al. 2024

IEEE Access

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Circumventing the data rate bottleneck due to the bandwidth limitation of optical devices is an imperative for today's fiber-optic communication systems. This paper investigates a two-stage laser driver consisting of a precoder and an encoder stage, capable of applying duobinary modulation to a bandwidth-limited verticalcavity surface-emitting laser (VCSEL). Thus, the transmitter's data rate capacity per cycle of bandwidth is significantly increased. By employing a cross-coupled architecture for the precoder stage, the output data rate of the driver is doubled with respect to the input data rate. Electro-optical measurements of the driver bonded to a VCSEL with inherent bandwidth of 20 GHz yielded duobinary eye diagrams at data rates up to 56 Gb/s, which represents a significant speed enhancement with regard to the laser's own bandwidth. To the best of the authors' knowledge, this is the fastest integrated duobinary VCSEL driver reported so far, as well as the first chip-to-chip integration of such an electrical driver with a VCSEL device.

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A 37-Gb/s Monolithically Integrated Electro-Optical Transmitter in a Silicon Photonics 250-nm BiCMOS Process

Cited by 7 publications

References 13 publications

Silicon photonics interfaced with microelectronics for integrated photonic quantum technologies: a new era in advanced quantum computers and quantum communications?

Silicon photonics interfaced with microelectronics for integrated photonic quantum technologies: a new era in advanced quantum computers and quantum communications?

Broadband Polarization-Independent Edge Couplers With High Efficiency Based on SiN-Si Dual-Stage Structure

A High-Speed 130-nm SiGe BiCMOS Integrated Duobinary Driver for Data Rate Capacity Enhancement in VCSEL-Based Optical Links

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