2021
DOI: 10.1109/jssc.2021.3049560
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A 36-Channel Auto-Calibrated Front-End ASIC for a pMUT-Based Miniaturized 3-D Ultrasound System

Abstract: We present an area-and power-efficient applicationspecific integrated circuit (ASIC) for a miniaturized 3-D ultrasound system. The ASIC is designed to transmit pulse and receive echo through a 36-channel 2-D piezoelectric Micromachined Ultrasound Transducer (pMUT) array. The 36-channel ASIC integrates a transmitter (TX), a receiver (RX), and an analog-todigital converter (ADC) within the 250-μm pitch channel while consuming low-power and supporting calibration to compensate for the process variation of the pMU… Show more

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Cited by 33 publications
(46 citation statements)
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“…Adding extra digital buffers between the level-translators and the gates of HV transistors helps to speed up switching [26], but requires a floating ground at the voltage of HVDD-V GS , where V GS is the gate-source voltage of the HV transistor. Alternatively, some designs [29], [30] proposed to generate HV pulses using stacked LV transistors, but this is associated with increased circuit complexity and potential reliability concerns.…”
Section: A Square-wave Pulsersmentioning
confidence: 99%
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“…Adding extra digital buffers between the level-translators and the gates of HV transistors helps to speed up switching [26], but requires a floating ground at the voltage of HVDD-V GS , where V GS is the gate-source voltage of the HV transistor. Alternatively, some designs [29], [30] proposed to generate HV pulses using stacked LV transistors, but this is associated with increased circuit complexity and potential reliability concerns.…”
Section: A Square-wave Pulsersmentioning
confidence: 99%
“…An alternative charge-recycling mechanism was proposed in [30], in which the two electrodes of a differential PMUT element are shorted to discharge the element, rather than switching both electrodes to ground. This helps to reduce the energy spent on charging and discharging parasitic capacitance to ground.…”
Section: B Multi-level Pulsersmentioning
confidence: 99%
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“…In addition, the CMOS process is limited to technologies that allow electrical contact from its last metal layer to the MEMS device within a specific post-process. Up until now, most of the reported PMUTs over CMOS are based on two-wafer bonding processes, in which the wafer with the PMUT (either AlN or PZT) is bonded to a CMOS wafer with analog front-end circuitry [10][11][12][13]. Despite the feasibility of this approach, the complexity of the bonding process and the limitations of the achievable fill factor impose some limitations.…”
Section: Introductionmentioning
confidence: 99%