A 320 GHz on-chip slot antenna array using CBCPW feeding network in 0.13-μm SiGe technology

Hou, Zhang Ju; Yang, Yang; Zhu, Xi; Liao, Shaowei; Man, Shum Kam

doi:10.1109/mwsym.2017.8058710

Cited by 12 publications

(6 citation statements)

References 8 publications

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“…The atmospheric attenuation property of 60 GHz was one of the driving forces for regulatory agencies such as the U.S. FCC to unlicense the multi-GHz of bandwidth at 60 GHz [6]. Beyond 60 GHz, more research is needed on how to design and develop THz onchip antennas [7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Study on on-Chip Antenna Design Based on Metamaterial-Inspired and Substrate-Integrated Waveguide Properties for Millimetre-Wave and THz Integrated-Circuit Applications

Alibakhshikenari

Virdee

Althuwayb

et al. 2020

J Infrared Milli Terahz Waves

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This paper presents the results of a study on improving the performance parameters such as the impedance bandwidth, radiation gain and efficiency, as well as suppressing substrate loss of an innovative antenna for on-chip implementation for millimetre-wave and terahertz integrated-circuits. This was achieved by using the metamaterial and the substrate-integrated waveguide (SIW) technologies. The on-chip antenna structure comprises five alternating layers of metallization and silicon. An array of circular radiation patches with metamaterial-inspired crossed-shaped slots are etched on the top metallization layer below which is a silicon layer whose bottom surface is metalized to create a ground plane. Implemented in the silicon layer below is a cavity above which is no ground plane. Underneath this silicon layer is where an open-ended microstrip feedline is located which is used to excite the antenna. The feed mechanism is based on the coupling of the electromagnetic energy from the bottom silicon layer to the top circular patches through the cavity. To suppress surface waves and reduce substrate loss, the SIW concept is applied at the top silicon layer by implementing the metallic via holes at the periphery of the structure that connect the top layer to the ground plane. The proposed on-chip antenna has an average measured radiation gain and efficiency of 6.9 dBi and 53%, respectively, over its operational frequency range from 0.285–0.325 THz. The proposed on-chip antenna has dimensions of 1.35 × 1 × 0.06 mm3. The antenna is shown to be viable for applications in millimetre-waves and terahertz integrated-circuits.

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Section: Introductionmentioning

confidence: 99%

Study on on-Chip Antenna Design Based on Metamaterial-Inspired and Substrate-Integrated Waveguide Properties for Millimetre-Wave and THz Integrated-Circuit Applications

Alibakhshikenari

Virdee

Althuwayb

et al. 2020

J Infrared Milli Terahz Waves

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“…Compared with previously, reported on-chip antennas based on CMOS process as shown in Table 2, the proposed antenna has a broader bandwidth of about 17GHz and a higher efficiency above 38%. Unlike the traditional slot antenna [3], [5], [8], [9], which has high loss and low gain, the gain of OSAR antenna array improved gain. Moreover, in comparison with the DRA [14] and array [15], the proposed antenna achieved similar efficiency without loading Dielectric resonator.…”

Section: Resultsmentioning

confidence: 99%

“…[1]- [4]. Recently, Silicon Germanium (SiGe) technology has been reported to achieve the operating frequency over 300 GHz [5]. The good performance of on-chip antenna is one of the fundamental components, including high gain and wide bandwidth.…”

Section: Introductionmentioning

confidence: 99%

A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array

Zhu

Xiao

2020

IEEE Access

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In this paper, an octagonal shorted annular ring (OSAR) antenna array is presented based on 130-nm SiGe BiCMOS technology without any post-processes. The OSAR antenna consists of annular ring patch, an array of shorted pins and ground which is formed a cavity to enhance the gain and reduce surface waves. The 1 × 2 OSAR antenna array is designed and fabricated with the die area of 550× 1100µm 2. The measured −10-dB impedance bandwidth is more than 17 GHz (303-320 GHz). The proposed on-chip antenna array is achieved a measurement perk gain of 4.1 dBi at 320 GHz and the simulated radiation efficiency of 38 %. INDEX TERMS An octagonal shorted annular ring, on-chip antenna array, terahertz (THz), 130-nm SiGe BiCMOS technology.

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“…In such systems an antenna plays an important component to interface the terahertz signal with free-space. Various THz antennas have been reported in the literature including dipole antenna, spiral antenna, graphene antenna, leaky wave antenna, on-chip antenna, Yagi-Uda antenna and butterfly shaped antenna [1][2][3][4][5][6][7]. Close examination of these antennas reveals their limitations, particularly in the way they interact with electromagnetic waves for optimum impedance matching necessary for effective detection and their construction [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

High Performance On-Chip Array Antenna Based on Metasurface Feeding Structure for Terahertz Integrated Circuits

Alibakhshikenari

Virdee

See

et al. 2019

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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In this letter, a novel on-chip array antenna with high-performances is investigated which is based on CMOS 20ȝm Silicon technology for operation over 0.6-0.65 THz. The proposed array structure is constructed on three layers composed of Silicon-Ground-Silicon layers. The ground-plane has sandwiched between two silicon layers. Two antennas are implemented on the top layer, where each antenna is constituted from three subantennas. The sub-antennas are constructed from interconnected dual-rings. Also, the sub-antennas are interconnected to each other. This approach enlarges the effective aperture area of the array, which has caused to improve its performance parameters. Surface waves and substrate losses in the structure are suppressed with the metallic via-holes that have inserted through the three layers and implemented between the radiation elements. To excite the structure, a novel feeding mechanism is used comprising opencircuited microstrip lines located on the back side of the structure, which couple the electromagnetic energy from the bottom layer to the antennas on the top-layer through metasurface slot-lines in the middle ground-plane layer. The results show the proposed on-chip antenna array has an average radiation gain, efficiency, and isolation of 7.62 dBi, 32.67%, and-30 dB, respectively.

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A 320 GHz on-chip slot antenna array using CBCPW feeding network in 0.13-μm SiGe technology

Cited by 12 publications

References 8 publications

Study on on-Chip Antenna Design Based on Metamaterial-Inspired and Substrate-Integrated Waveguide Properties for Millimetre-Wave and THz Integrated-Circuit Applications

Study on on-Chip Antenna Design Based on Metamaterial-Inspired and Substrate-Integrated Waveguide Properties for Millimetre-Wave and THz Integrated-Circuit Applications

A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array

High Performance On-Chip Array Antenna Based on Metasurface Feeding Structure for Terahertz Integrated Circuits

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