In this paper, an octagonal shorted annular ring (OSAR) antenna array is presented based on 130-nm SiGe BiCMOS technology without any post-processes. The OSAR antenna consists of annular ring patch, an array of shorted pins and ground which is formed a cavity to enhance the gain and reduce surface waves. The 1 × 2 OSAR antenna array is designed and fabricated with the die area of 550× 1100µm 2. The measured −10-dB impedance bandwidth is more than 17 GHz (303-320 GHz). The proposed on-chip antenna array is achieved a measurement perk gain of 4.1 dBi at 320 GHz and the simulated radiation efficiency of 38 %. INDEX TERMS An octagonal shorted annular ring, on-chip antenna array, terahertz (THz), 130-nm SiGe BiCMOS technology.
In this paper, a TE 340-mode substrate-integrated cavity (SIC) excited 2 × 2 slot antenna subarray with two TE 210-mode SICs' loading is presented at 140 GHz in low-temperature co-fired ceramic. By using the TE 340-mode SIC, the number of vias used in the feeding network and the area of the feeding network can be reduced compared to the feeding network composed of conventional TE 10 /TE 20-mode SIW power dividers. The proposed simplified and miniaturized high-order mode SIC-based feeding network leads to lower transmission loss and fabrication cost and reduces the fabrication difficulty. Each pair of radiating slots is loaded by a TE 210-mode SIC to improve the impedance bandwidth and the gain performance. For the proof of concept, an 8 × 8 antenna array is further designed and measured. The measured impedance bandwidth of the proposed 8 × 8 antenna array is 10.7% from 130.3 to 145 GHz for |S 11 | ≤ −10 dB. The measured peak gain is 20.5 dBi. The measured radiation efficiency is 59.2%. INDEX TERMS 140 GHz, low temperature co-fired ceramic (LTCC), TE 340 mode, TE 210 mode, substrate integrated cavity (SIC), slot antenna.
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