“…[1][2][3] However, one goal in the development of p-STT-MRAMs beyond a feature size of 20 nm is to meet the demands of device performance, including a high tunneling magnetoresistance ratio (TMR) of 150%, a low critical current density (J C ) of 4.7 MA/cm 2 , and a good thermal stability (∆ = E/k B T) of 74. Here, E = K eff V is the energy barrier, M S is the saturation magnetization, H k is the anisotropy field, K eff is the effective perpendicular magnetic anisotropy (PMA) energy density, V is the volume of the magnetic layer, k B is the Boltzmann constant, and T is temperature.…”