2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) 2016
DOI: 10.1109/wmcas.2016.7577491
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A 300MHz to 1200MHz saturated broadband amplifier in GaN for 2W applications

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Cited by 5 publications
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“…It is a standard benchmark taken by all prior methods (Lyu et al 2018;Settaluri et al 2020;Zhao and Zhang 2020;Wang et al 2020;Liu et al 2009). Second, a GaN RF power amplifier (PA) (Diduck et al 2016) whose schematic is not shown here is used as a more challenging high-frequency example. The design space of device parameters and the sampling space of desired specifications for the two circuits are listed in Table 1.…”
Section: Methodsmentioning
confidence: 99%
“…It is a standard benchmark taken by all prior methods (Lyu et al 2018;Settaluri et al 2020;Zhao and Zhang 2020;Wang et al 2020;Liu et al 2009). Second, a GaN RF power amplifier (PA) (Diduck et al 2016) whose schematic is not shown here is used as a more challenging high-frequency example. The design space of device parameters and the sampling space of desired specifications for the two circuits are listed in Table 1.…”
Section: Methodsmentioning
confidence: 99%