A 300GHz Wireless Transceiver in 65nm CMOS for IEEE802.15.3d Using Push-Push Subharmonic Mixer

Abdo, Ibrahim; Fujimura, Takuya; Miura, Tsuyoshi; Tokgoz, Korkut Kaan; Hamada, Hiroshi; Nosaka, Hideyuki; Shirane, Atsushi; Okada, Kei

doi:10.1109/ims30576.2020.9224033

Cited by 44 publications

(12 citation statements)

References 13 publications

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“…In spite of this limitation, we have realized the 300GHz CMOS transmitter and receiver. In the transmitter, a mixer-last architecture is adopted in which a mixer is used in the final stage [21][22][23][24][25][26]; since the output power of a single mixer is small, the output power is enhanced by power coupling multiple mixers. In the receiver, a mixer-first architecture is adopted, in which the mixer is used in the first stage [25,27,28].…”

Section: Ghz Cmos Transceiversmentioning

confidence: 99%

Overview of sub-terahertz communication and 300GHz CMOS transceivers

Fujishima

2021

IEICE Electron. Express

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A 44 GHz frequency band from 252 GHz to 296 GHz has been identified for communications. This frequency band is part of the 300 GHz band, which is expected to be utilized for ultra-high speed wireless communication toward 6G. In this letter, we will discuss the requirements for ultra-wideband wireless communications in the subterahertz range, including the 300 GHz band, and clarify the necessity of a communication system based on phased arrays. Finally, a 300 GHz CMOS wireless transceiver capable of transmitting data rates of up to 80 Gb/s that can be utilized as an element of this phased array is presented.

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Section: Ghz Cmos Transceiversmentioning

confidence: 99%

Overview of sub-terahertz communication and 300GHz CMOS transceivers

Fujishima

2021

IEICE Electron. Express

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“…They have further developed a variety of more integrated communication systems along this harmonic mixing idea, and they have been at the international leading level in the field of silicon‐based THz integrated wireless communication [ 132–136 ] . In addition, Nippon Telegraph and Telephone Corporation (NTT) and Tokyo Institute of Technology have also developed a variety of communication systems that can support high‐order modulations with a working frequency around 300 GHz [ 137–145 ] .…”

Section: Silicon‐based Communication Systemmentioning

confidence: 99%

“…Table 1 [ 98, 123, 133, 144, 178‐185 ] shows some typical silicon‐based THz communication systems that have realized high data rate wireless communication. Related reports are mainly concentrated in major foreign universities and research institutes.…”

Section: Silicon‐based Communication Systemmentioning

confidence: 99%

Research on Silicon‐Based Terahertz Communication Integrated Circuits

Zhou

CHEN

Tang

et al. 2022

Chinese J of Electronics

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With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter-wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput. The terahertz (THz) frequency bands have abundant spectrum resources, which can provide sufficient bandwidth to expand channel capacity and increase transmission data rate. In addition, with the rapid development of silicon-based semiconductor technology, its characteristic size keeps decreasing, and the radio frequency performance of active devices is gradually approaching the performance of III-V semiconductor technology. The realization of THz communication systems based on low-cost, high-stability, and easy-to-integrate silicon-based process has become a feasible solution. This review summarizes the reported silicon-based THz communication systems, as well as the key sub-circuit chips in these systems, including the local oscillator, power amplifier, low noise amplifier, on-chip antenna and transceiver chip, etc.

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“…The subharmonic mixer utilizes the second harmonic of the 114-117GHz LO input. The CMOS part consists of the mentioned subharmonic mixer, V-band IF amplifier, tripler, and LO buffers [28]. The InP-HEMT amplifiers are designed using power combining to improve the overall linearity [31].…”

Section: System Architecture and Wireless Link Analysismentioning

confidence: 99%

“…CMOS amplifiers operating around 300GHz were introduced in the literature despite the low f max as in [19,20], but a reliable wideband operation is yet to be demonstrated. Many works sacrificed the presence of an amplifier to realize the 300GHz wireless link using CMOS [21,22,23,24,25,26,27,28,29,30]. The resulting mixer-last transmitter, mixer-first receiver system has very severe mixer linearity requirements, causing the overall system complexity to increase in order to get a reliable high data rate link.…”

Section: Introductionmentioning

confidence: 99%

64QAM wireless link with 300GHz InP-CMOS hybrid transceiver

Abdo

Hamada

Nosaka

et al. 2021

IEICE Electron. Express

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This letter presents a 300GHz hybrid transceiver using CMOS and InP-HEMT, which achieves a maximum data rate of 56Gb/s. A 300GHz CMOS transceiver with a mixer-last transmitter mixer-first receiver is utilized to up-and down-convert the V-band IF signal to the 300GHzband, while InP-HEMT is used for PA and LNA design. The transceiver also achieves wireless communication in ch.13-24 (1.76Gbaud), ch.39-44 (3.52Gbaud), ch.52-54 (7.04Gbaud) and ch.59 (10.56Gbaud) with lower than -16.7dB EVM. 64QAM modulation is also achieved for a 5Gbaud symbol rate. The CMOS transmitter and receiver consume 0.29W and 0.17W from a 1V supply, respectively, and the InP-HEMT PA and LNA consume 1.44W from a 1.2V supply.

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A 300GHz Wireless Transceiver in 65nm CMOS for IEEE802.15.3d Using Push-Push Subharmonic Mixer

Cited by 44 publications

References 13 publications

Overview of sub-terahertz communication and 300GHz CMOS transceivers

Overview of sub-terahertz communication and 300GHz CMOS transceivers

Research on Silicon‐Based Terahertz Communication Integrated Circuits

64QAM wireless link with 300GHz InP-CMOS hybrid transceiver

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