A 3&amp;#x00D7;3mm&lt;sup&gt;2&lt;/sup&gt; LTE/WCDMA dual-mode power amplifier module with integrated high directivity coupler

Hau, Gary; Hussain, Abid; Turpel, J.; Donnenwirth, J.

doi:10.1109/bctm.2011.6082766

Cited by 10 publications

(2 citation statements)

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“…The measured results of the proposed PAM are compared with others in the HPM/MPM/LPM in Table 2. The BW of References [2] and [5] is just 60 MHz. Broadband means a low Q value, which has a bad influence on the RF performance.…”

Section: Implementation and Measurementmentioning

confidence: 99%

“…However, all kinds of mobile communication standards currently challenge us to provide an all in one chip. So, in order to realize the 300 MHz BW across 1.7-2.0 GHz, the PAE of the HPM is slightly lower than References [2] and [5] for the tradeoff between the bandwidth and the PAE. But in the LPM across 1.7-2.0 GHz, compared with the others, the PAE can achieve more than 18.2%.…”

Section: Implementation and Measurementmentioning

confidence: 99%

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Multi-mode multi-band power amplifier module with high low-power efficiency

Zhang¹

2015

J. Semicond.

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Increasingly, mobile communications standards require high power efficiency and low currents in the low power mode. This paper proposes a fully-integrated multi-mode and multi-band power amplifier module (PAM) to meet these requirements. A dual-path PAM is designed for high-power mode (HPM), medium-power mode (MPM), and low-power mode (LPM) operations without any series switches for different mode selection. Good performance and significant current saving can be achieved by using an optimized load impedance design for each power mode. The PAM is tapeout with the InGaP/GaAs heterojunction bipolar transistor (HBT) process and the 0.18-m complementary metal-oxide semiconductor (CMOS) process. The test results show that the PAM achieves a very low quiescent current of 3 mA in LPM. Meanwhile, across the 1.7-2.0 GHz frequency, the PAM performs well. In HPM, the output power is 28 dBm with at least 39.4% PAE and -40 dBc adjacent channel leakage ratio 1 (ACLR1). In MPM, the output power is 17 dBm, with at least 21.3% PAE and -43 dBc ACLR1. In LPM, the output power is 8 dBm, with at least 18.2% PAE and 40 dBc ACLR1.

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Section: Implementation and Measurementmentioning

confidence: 99%

Section: Implementation and Measurementmentioning

confidence: 99%

Multi-mode multi-band power amplifier module with high low-power efficiency

Zhang¹

2015

J. Semicond.

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A triple-power-mode power amplifier using an Rx band noise reduction circuit for W-CDMA/LTE handsets

Hirobe

Shinjo

Iyomasa

et al. 2014

2014 44th European Microwave Conference

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A triple-power-mode power amplifier (PA) using a receive (Rx) band noise reduction circuit for W-CDMA/LTE handsets is described. The Rx band noise reduction circuit uses an LC trap circuit resonating at the difference frequency between transmit (Tx) and Rx signals, and suppresses the Rx band noise caused by mixing with the Tx signal and the difference frequency noise which comes from an input matching network and a bias circuit in the PA. The PA accommodates switchable signal paths corresponding to triple (high, middle and low) power modes for saving battery current in practical handset use. Simulations show an Rx band noise improvement of 3.5 dB due to the LC trap circuit, and measurements show both a low Rx band noise of -136 dBm/Hz and a high gain of 30 dB at 29dBm of Pout. Measurements also show that the PA achieves PAE as high as 41% at Pout of 29dBm while keeping ACLR less than -38dBc in the high power mode under a condition of 3.4V Vcc and 1450MHz W-CDMA (3GPP Rel.99) modulated signals. In the middle and low power modes, PAE of 22 % at Pout of 18dBm and 16 % at 7dBm are obtained with the same condition, respectively.

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