A 3.6 GHz dual modulus prescaler IC using optimal pseudomorphic HEMT structure on Si substrates

Suehiro, Haruyoshi; Ohori, Tatsuya; Nakasha, Yasuhiro; Miyata, T.; Watanabe, Y.; Kuroda, S.; Takikawa, M.

doi:10.1109/iedm.1994.383267

Cited by 2 publications

(1 citation statement)

References 9 publications

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“…[3,4] Moreover, AlInAs/GaInAs enhancement-mode (E-mode) HEMT can be integrated with the corresponding depletion-mode (D-mode) HEMT to form direct-coupled FET logic (DCFL) circuits in a simple circuit configuration, which can be combined with the mainstream Si-based CMOS process technology to implement ultra-high-speed and very-largescale logic digital integrated circuits on Si substrate in the foreseeable future. [5] However, conventional GaInAs channel HEMT is a D-mode device, and the realization of highperformance E-mode devices will pave the way for fabrication of high-speed GaInAs channel E/D-mode CMOS-like DCFL circuits for digital applications. Therefore, most of the recent studies used different technologies, such as the gate-recess etching, [6] the buried-gate technology, [7,8] and fluorine-based plasma treatment [9][10][11] to develop E/D-mode AlInAs/GaInAs HEMTs on the same epi-wafer.…”

Section: Introductionmentioning

confidence: 99%

Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD

Huang¹,

Li²,

Lau³

2015

Chinese Phys. B

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A combination of self-aligned fluoride-based plasma treatment and post-gate rapid thermal annealing was developed to fabricate a novel 120-nm T-shaped gate normally-off metamorphic Al0.49In0.51As/Ga0.47In0.53As HEMT device on a Si substrate grown by metal-organic chemical vapor deposition (MOCVD). A shift of the threshold voltage, from −0.42 V to 0.11 V was obtained and the shift can be effectively adjusted by the process parameter of CF4 plasma treatment. Furthermore, a side benefit of reducing the leakage current of the device up to two orders of magnitude was also observed. E-mode transistors with 120 nm gate length own fT up to 160 GHz and fmax of 140 GHz. These characteristics imply the potential of the fluoride-based plasma treatment technology for the fabrication of monolithic enhancement/depletion-mode mHEMTs, which also encourage the massive production with this low-cost technology.

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