A 2D-SnSe film with ferroelectricity and its bio-realistic synapse application

Wang, Hong; Lu, Wanheng; Hou, Shuaihang; Yu, Bingxu; Zhou, Zhenyu; Xue, Yuli; Guo, Rui; Wang, Shufang; Zeng, Kaiyang; Yan, Xiaobing

doi:10.1039/d0nr03724a

Cited by 31 publications

(29 citation statements)

References 51 publications

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“…[108][109][110][111] In other devices, ferroelectric materials are used as a tunneling barrier in junction devices. [72][73][74] In the beginning, conventional semiconductor channels were replaced by 2D materials, such as graphene and TMDs, in 2D-material-based non-volatile FeRAM, by still using conventional ferroelectric materials such as Pb[Zr x Ti 1−x ]O 3 (PZT) and polyvinylidene fluoride (PVDF). For instance, Chen et al reported a FeRAM device with a channel of graphene and a dielectric of PVDF (Figure 7a), in which the type and density of charge carriers in the channel were tuned by switching the polarization direction of the ferroelectric dielectric (Figure 7b).…”

Section: Ferroelectric Synaptic Devicementioning

confidence: 99%

“…In addition, the SnSe FeRAM sandwiched by Au and Nb-doped SrTiO 3 shows the bio-synaptic functions of STDP, STP, and LTP due to the gradual ferroelectric polarization switching with high reliability (Figure 7f,g). [74]…”

Section: Ferroelectric Synaptic Devicementioning

confidence: 99%

mentioning

confidence: 99%

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Artificial Neuron and Synapse Devices Based on 2D Materials

Lee

Baek

Ren

et al. 2021

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Neuromorphic systems, which emulate neural functionalities of a human brain, are considered to be an attractive next‐generation computing approach, with advantages of high energy efficiency and fast computing speed. After these neuromorphic systems are proposed, it is demonstrated that artificial synapses and neurons can mimic neural functions of biological synapses and neurons. However, since the neuromorphic functionalities are highly related to the surface properties of materials, bulk material‐based neuromorphic devices suffer from uncontrollable defects at surfaces and strong scattering caused by dangling bonds. Therefore, 2D materials which have dangling‐bond‐free surfaces and excellent crystallinity have emerged as promising candidates for neuromorphic computing hardware. First, the fundamental synaptic behavior is reviewed, such as synaptic plasticity and learning rule, and requirements of artificial synapses to emulate biological synapses. In addition, an overview of recent advances on 2D materials‐based synaptic devices is summarized by categorizing these into various working principles of artificial synapses. Second, the compulsory behavior and requirements of artificial neurons such as the all‐or‐nothing law and refractory periods to simulate a spike neural network are described, and the implementation of 2D materials‐based artificial neurons to date is reviewed. Finally, future challenges and outlooks of 2D materials‐based neuromorphic devices are discussed.

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Section: Ferroelectric Synaptic Devicementioning

confidence: 99%

Section: Ferroelectric Synaptic Devicementioning

confidence: 99%

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Artificial Neuron and Synapse Devices Based on 2D Materials

Lee

Baek

Ren

et al. 2021

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“…They further showed that stable ferroelectricity could be achieved in both bulk and thin-layer In 2 Se 3 . More recently, another two Tin-based 2D materials, including SnSe and SnS have been experimentally examined to be ferroelectrics by Wang et al and Kwon et al, respectively [40,41]. By using PFM, the SnSe shows out-of-plane polarization behavior, while SnS shows the in-plane polarization behavior with a relatively large remnant polarization (P r ) of 2P r ∼ 40 μC cm −2 .…”

Section: Memory Technologies For Neuromorphic Computingmentioning

confidence: 99%

“…Additionally, they can also be integrated into transistor-type devices with heterostructures to realize synaptic behaviors. More recently, a considerable number of 2D materials (such as WTe 2 , d1T-MoTe 2 , SnTe, CuInP 2 S 6 (CIPS), BA 2 PbCl 4 , α-In 2 Se 3 , β -In 2 Se 3 , 2H α-In 2 Se 3 , SnSe, and SnS) are found to possess ferroelectricity property [32][33][34][35][36][37][38][39][40][41]. Besides, other non-ferroelectric 2D materials can also be easily converted into stable ferroelectric polarization materials by various external factors such as doping, strain engineering, surface modification, and defect engineering [42][43][44][45].…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric memory based on two-dimensional materials for neuromorphic computing

Chen

Pam

et al. 2022

Neuromorph. Comput. Eng.

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Ferroelectric memory devices with fast-switching speed and ultra-low power consumption have been recognized as promising building blocks for brain-like neuromorphic computing. In particular, ferroelectric memories based on 2D materials are attracting increasing research interests in recent years due to their unique properties that are unattainable in conventional materials. Specifically, the atomically thin 2D materials with tunable electronic properties coupled with the high compatibility with existing complementary metal-oxide-semiconductor (CMOS) technology manifests their potential for extending state-of-the-art ferroelectric memory technology into atomic-thin scale. Besides, the discovery of 2D materials with ferroelectricity shows the potential to realize functional devices with novel structures. This review highlights the recent progress in ferroelectric memory devices based on 2D materials for neuromorphic computing. The merits of such devices and the range of 2D ferroelectrics being explored to-date are reviewed and discussed, which include two- and three-terminal ferroelectric synaptic devices based on 2D materials platform. Finally, current developments and remaining challenges in achieving high-performance 2D ferroelectric synapses are discussed.

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Recent Advances in SnSe Nanostructures beyond Thermoelectricity

Wang

Huang

et al. 2022

Adv Funct Materials

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Layered SnSe is an emerging class of black phosphorus, which is non-toxic, eco-friendly, and chemically stable. Recently, SnSe nanostructures have triggered more research interest and enabled broad applications beyond demonstrating their great performances on thermoelectricity. However, there are also a great many significant studies of SnSe nanostructures beyond thermoelectricity. SnSe quantum dots, nanosheets, nanowires, and thin films with diverse morphologies have been synthesized using various chemical and physical preparation approaches. SnSe is a multi-phase semiconductor, and its nanostructures endow unique properties, including small electron effective mass, ultralow thermal conductivity, huge anisotropy, and the largest 2D piezoelectric coefficient ever predicted. The versatility of SnSe nanostructures can enable potential applications ranging from ultrafast photonics, logic devices, photodetectors, solar cells, photocatalysis, energy storage, and biology to more cutting-edge interdisciplinary subjects. In this review, the recent advances made in SnSe nanostructures are summarized, covering basics, synthesis, properties, and applications, just giving a passing comment on thermoelectricity. An in-depth perspective on the challenges and prospects of SnSe nanostructures toward broad and practical applications is also given.

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A 2D-SnSe film with ferroelectricity and its bio-realistic synapse application

Abstract: Catering to the general trend of artificial intelligence development, simulating human’s learning and thinking behavior have become the research focus. Second-order memristors, which is more analogous to biologic synapses, are...

Cited by 31 publications

References 51 publications

Artificial Neuron and Synapse Devices Based on 2D Materials

Artificial Neuron and Synapse Devices Based on 2D Materials

Ferroelectric memory based on two-dimensional materials for neuromorphic computing

Recent Advances in SnSe Nanostructures beyond Thermoelectricity

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