A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes

Abstract

This work presents a numerical simulation study of HgCdTe-based avalanche photodetectors (APDs). The two-dimensional model used is based on a fullband Monte Carlo approach in which the electronic structure is computed using a nonlocal empirical pseudopotential model with spin-orbit corrections. The carrier-phonon scattering rates have been computed from first principles using a rigid pseudo-ion model. The most attractive feature of these devices is the potential for single-carrier ionization when electrons are used as the primary injection carrier. For this reason, this work focuses on two front-illuminated (electron-injection) device structures: a planar diffused PIN structure and a planar diffused PN photodiode with guard rings. To predict the performance of these APDs, the electron multiplication gain has been studied as a function of the position where photogenerated carriers are injected and as a function of the curvature of the p-type diffusion region. We find that, in the diffused PIN structure, the limited lateral spatial extent of the high-electricfield region leads to a reduction of the multiplication gain from the center of the device to the periphery. Furthermore, the higher the curvature, the more abruptly the gain decreases. For the simple PN structure, we find that the presence of the guard rings removes the high electric field from the surface and induces a more gradual roll-off of the gain from the center of the device to the periphery.