A 288-GHz Lens-Integrated Balanced Triple-Push Source in a 65-nm CMOS Technology

Grzyb, Janusz; Zhao, Yan; Pfeiffer, Ullrich R.

doi:10.1109/jssc.2013.2253403

Cited by 127 publications

(42 citation statements)

References 24 publications

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“…In the VCO's comparison table, the proposed VCO demonstrates the widest tuning range with similar to [17] and [34] (42 dB better than [18]). Note that for the oscillators reported in [34], the frequency tuning is achieved by TABLE II VCO COMPARISON TABLE III SYNTHESIZER COMPARISON changing the supply voltage, and thus suffer from considerable output power variation.…”

Section: Measurement Resultsmentioning

confidence: 99%

A Silicon-Based 0.3 THz Frequency Synthesizer With Wide Locking Range

Chiang

Wang

Momeni

et al. 2014

IEEE J. Solid-State Circuits

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Abstract-A 300 GHz frequency synthesizer incorporating a triple-push VCO with Colpitts-based active varactor (CAV) and a divider with three-phase injection is introduced. The CAV provides frequency tunability, enhances harmonic power, and buffers/injects the VCO fundamental signal from/to the divider. The locking range of the divider is vastly improved due to the fact that the three-phase injection introduces larger allowable phase change and injection power into the divider loop. Implemented in 90 nm SiGe BiCMOS, the synthesizer achieves a phase-noise of -77.8 dBc/Hz (-82.5 dBc/Hz) at 100 kHz (1 MHz) offset with a crystal reference, and an overall locking range of 280.32-303.36 GHz (7.9%).

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Section: Measurement Resultsmentioning

confidence: 99%

A Silicon-Based 0.3 THz Frequency Synthesizer With Wide Locking Range

Chiang

Wang

Momeni

et al. 2014

IEEE J. Solid-State Circuits

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“…High-performance SiGe HBTs exhibit breakdown voltages on the order of 1.5 V for BV ceo and 4 V for BV cbo [28,30], while RF CMOS suffers from low drain voltages of about 1 V in 65 nm technologies [31]. Beyond f max, power cannot be amplified on chip and needs to be generated in the frequency translation process, e.g., by sub-harmonic mixers, harmonic multiplier chains [32][33][34], or harmonic N-push oscillators [35][36][37][38][39].…”

Section: Power Generation Limitationsmentioning

confidence: 99%

“…Specifically, the center feed may, in general, be non-uniformly tapered using stepwise approximation (Fig. 2b) or even some non-monotonic shapes [37] (not shown here) altogether with the variable ring width. All low-frequency routing into the pixel center is realized along the antennas zerofield intensity (H-plane).…”

Section: Silicon On-chip Wire Ring Antennasmentioning

confidence: 99%

THz Direct Detector and Heterodyne Receiver Arrays in Silicon Nanoscale Technologies

Grzyb¹,

Pfeiffer²

2015

J Infrared Milli Terahz Waves

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The main scope of this paper is to address various implementation aspects of THz detector arrays in the nanoscale silicon technologies operating at room temperatures. This includes the operation of single detectors, detectors operated in parallel (arrays), and arrays of detectors operated in a video-camera mode with an internal reset to support continuous-wave illumination without the need to synchronize the source with the camera (no lock-in receiver required). A systematic overview of the main advantages and limitations in using silicon technologies for THz applications is given. The on-chip antenna design challenges and co-design aspects with the active circuitry are thoroughly analyzed for broadband detector/receiver operation. A summary of the state-of-the-art arrays of broadband THz direct detectors based on two different operation principles is presented. The first is based on the non-quasistatic resistive mixing process in a MOSFET channel, whereas the other relies on the THz signal rectification by nonlinearity of the base-emitter junction in a high-speed SiGe heterojunction bipolar transistor (HBT) . For the MOSFET detector arrays implemented in a 65 nm bulk CMOS technology, a state-of-the-art optical noise equivalent power (NEP) of 14 pW/ √ H z at 720 GHz was measured, whereas for the HBT detector arrays in a 0.25 μm SiGe process technology, an optical NEP of 47 pW/ √ H z at 700 GHz was found. Based on the implemented 1k-pixel CMOS camera with an average power consumption of 2.5μW/pixel, various design aspects specific to video-mode operation are outlined and co-integration issues with the readout circuitry are analyzed. Furthermore, a single-chip 2 × 2 array of heterodyne receivers for multi-color active imaging in a 160-1000 GHz band is presented with a Janusz Grzyb J Infrared Milli Terahz Waves well-balanced NEP across the operation bandwidth ranging from 0.1 to 0.24 fW/Hz (44.1-47.8 dB single-sideband NF) and an instantaneous IF bandwidth of 10 GHz. In its present implementation, the receiver RF bandwidth is not continuously covered but divided into six bands centered around 165, 330, 495, 660, 820, and 990 GHz.

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“…However, it's difficult to get a low phase noise, high stability, and high power signal source at millimeter-waves frequencies. In general, Nth harmonic oscillators [1][2] and Amplifier Multiplier Chains (AMC) [3][4] are the two most commonly used methods. In AMC, a power amplifier is employed to amplify the signal generated by a low and stable frequency signal source, then the amplified signal is multiplied to high frequency by multiplier.…”

Section: Introductionmentioning

confidence: 99%

An amplifier-doubler chain with conversion gain improvement techniques

Zhang

et al. 2018

IEICE Electron. Express

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This paper presents an amplifier-douler chain to double the signal frequency from 21GHz to 42GHz with about 10GHz bandwidth of output frequency. For the improvement of conversion gain, the doubler adopts the fully differential Gilbert structure which provides large bandwidth and high conversion gain. Meanwhile, an inductive series LC network is used to form resonant tank with the parasitic capacitor to suppress the second harmonic of input frequency, hence the conversion gain of doubler is improved. Once again, the RLC parallel resonant network is employed as load of doubler and power amplifier, and it can improve bandwidth and conversion gain, too. What's more, transformer matching networks (TMN) are adopted to optimize the bandwidth and conversion gain of amplifier-douler chain. Finally, the amplifier-douler chain which fabricated by IBM SiGe 0.13μm BiCMOS technology shows 6.1dB conversion gain and -4.1dBm saturation output power with 26.5mA operating current and 2.8V supply voltage, and the fundamental and 3 rd harmonic rejection at 42GHz are 17.5dB and 38.6dB, respectively.

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A 288-GHz Lens-Integrated Balanced Triple-Push Source in a 65-nm CMOS Technology

Cited by 127 publications

References 24 publications

A Silicon-Based 0.3 THz Frequency Synthesizer With Wide Locking Range

A Silicon-Based 0.3 THz Frequency Synthesizer With Wide Locking Range

THz Direct Detector and Heterodyne Receiver Arrays in Silicon Nanoscale Technologies

An amplifier-doubler chain with conversion gain improvement techniques

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