A 28 nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macro for Automotive Achieving 6.4 GB/s Read Throughput by 200 MHz No-Wait Read Operation and 2.0 MB/s Write Throughput at Tj of 170C

Essential Roles, Challenges and Development of Embedded MCU Micro-Systems to Innovate Edge Computing for the IoT/AI Age

“…For example, hierarchical SA scheme with offset cancellation [9] and divided WL scheme with WL repeaters and distributed WL voltage (VWL) drivers [10] effectively shorten the random read access time. VWL temperature compensation [11] and dual rail WL driver can mitigate the voltage stress to the gate oxide of WL drivers/repeaters and guarantee time dependent dielectric breakdown (TDDB) lifetime. As shown in Fig.…”

“…For example, TDDB lifetime of inter-/intra-metal layer film for high voltage interconnections (MG and SL) gets worse due to narrower metal pitch and non-scaled P/E voltages. Given the different temperature dependency of TDDB (worst at high temperature) and erase speed of memory cells (slowest at low temperature), a temperatureadaptive step pulse erase control (TASPEC) was developed in 28nm SG-MONOS [11]. MG voltage and pulse width are automatically tuned in each step of erase sequence by monitoring equivalent cell Vth shift.…”

“…Design efforts for SG-MONOS P/E operations[9]-[11]: (a) design implementation of adaptive P/E control schemes, (b) adaptive reduction of erase time by IES and (c) peak current reduction by VPC.…”

Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N

“…For reliable operation in some of these scenarios, memory devices must survive at high-temperature and be radiation-tolerant . The largest temperature at which a stable operation of flash and dynamic random-access memories (DRAM) is guaranteed (378–443 K) is not enough to allow a long-duration exploration on the surface of other planets such as Venus, whose atmosphere can reach 733 K. − Notably, the required operating temperature for electronic components in future spacecrafts is expected to increase to 773 K . More temperature-stable technologies based on high bandgap semiconductors like SiC or GaN are hence required to overcome the limits of standard silicon technologies. , Implementing memories exploiting such semiconductors poses additional challenges.…”

A Novel 3D NOR Flash With Single-Crystal Silicon Channel: Devices, Integration, and Architecture

“…NOR flash has fast random access read speed (∼50 ns) and excellent reliability performances [10], [11]. And NOR flash is widely used in various code and computing application as embedded NVM [12], [13]. However, today NOR flash already stopped scaling due to the device limitations.…”