A 260-mW Ku-Band FMCW Transceiver for Synthetic Aperture Radar Sensor With 1.48-GHz Bandwidth in 65-nm CMOS Technology

Wang, Yong; Lou, Liheng; Chen, Bin; Zhang, Ying; Tang, Kai; Qiu, Lei; Liu, Supeng; Zheng, Yuanjin

doi:10.1109/tmtt.2017.2700271

Cited by 40 publications

(15 citation statements)

References 39 publications

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“…The 12-20 GHz receiver in [19] accomplishes good wideband reception and linearity with gain performance similar to the proposed work, but is inferior in terms of NF, input matching, and power consumption. Similarly, [20] proposed a receiver with superior power consumption and gain as compared to the proposed receiver, but it has a relatively narrowband reception of 1.48 GHz and poor NF. Even though the gain of the receiver in [21] is 53 dB over the 10 GHz bandwidth, the actual gain from the front-end is still 21 dB, where rest of the gain is provided by a baseband VGA.…”

Section: Measurement Resultsmentioning

confidence: 99%

A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

et al. 2020

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This paper presents a K u -band RF receiver front-end with broadband impedance matching and amplification. The major building blocks of the proposed receiver front-end include a wideband low-noise amplifier (LNA) employing a cascade of resistive feedback inverter (RFI) and transformer-loaded common source amplifier, a down-conversion mixer with push–pull transconductor and complementary LO switching stage, and an output buffer. Push–pull architecture is employed extensively to maximize the power efficiency, bandwidth, and linearity. The proposed two-stage LNA employs the stagger-tuned frequency response in order to extend the RF bandwidth coverage. The input impedance of RFI is carefully analyzed, and a wideband input matching circuit incorporating only a single inductor is presented along with useful equivalent impedance matching models and detailed design analysis. The prototype chip was fabricated in 45-nm CMOS technology and dissipates 78 mW from a 1.2-V supply while occupying chip area of 0.29 mm 2 . The proposed receiver front-end provides 21 dB conversion gain with 7 GHz IF bandwidth, 3.5 dB NF, −15.7 dBm IIP 3 while satisfying <−10 dB input matching over the whole input band.

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Section: Measurement Resultsmentioning

confidence: 99%

A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

et al. 2020

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“…Accordingly, NFmin is slightly decreased to 1.31 dB, and Gmax is increased to 16.5 dB, making it possible to realize the co-design of the active gain cell and the input matching network, as to be shown shortly. With postlayout simulation, the first stage achieves 16.2 dB maximum available gain and 1.5 dB minimum noise figure at 16 GHz, which is acceptable for the Ku-band LNA [12].…”

Section: A the Inductive Source Degenerated Cascode Amplifiermentioning

confidence: 93%

An Image Rejection Ku-Band CMOS Low Noise Amplifier With Bridged-Tee Band-Stop Filter

Cheng

et al. 2020

IEEE Access

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For satellite communication applications, this paper presents an image rejection Ku-band low noise amplifier (LNA) in a 65-nm CMOS process for the Hartley receiver architecture. To achieve high input/output linearity performance, the inductive source degenerated cascode and the capacitive neutralized common-source (CS) amplifier topologies are used in the LNA input and output stages, respectively. To achieve wideband input return loss, the minimum noise figure and high gain performance simultaneously, the inductive source degenerated cascode amplifier is co-designed with the fourth order input impedance matching network. For the image rejection purpose, a bridged-tee band-stop filter is proposed. The measurements show the LNA achieves 14.3-to-18.3 GHz 3 dB bandwidth with 17-to-20 dB power gain, 3.5to-4 dB noise figure, 17-to-37 dB image rejection and-5 dBm IIP3. Including all pads, the chip occupies a silicon area of 1360 × 450 μm 2 and consumes 72 mW DC power. INDEX TERMS CMOS, Ku-band, low noise amplifier (LNA), band-stop filter (BSF), image rejection.

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“…The recorded data of synchronization signals are sent to the ground processing system by the data transmission system. The STR should have the following functions: receiving and transmitting synchronization signals separately, switching between the master and auxiliary transceiver and different SANT ports [31]. The specific functional principles are as follows:…”

Section: Function and Working Principle Of Synchronization Transceivermentioning

confidence: 99%

The Synchronization Transceiver Design and Experimental Verification for the LuTan-1 SAR Satellite

Jiao

Liang

Liu

et al. 2020

Sensors

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The deviation between the two oscillators in BiSAR systems will cause a residual modulation of echo signal. Therefore, the phase synchronization is an important issue that must be addressed for BiSAR systems. An advanced non-interrupted phase synchronization scheme is used for the LuTan-1 SAR satellite. The synchronization transceiver (STR) is designed for transmitting and receiving synchronization signals. In addition, STR mainly consists of master and auxiliary transceivers and switch module. Furthermore, the function and working principle of STR are introduced, and the detailed design of each part is described. The measured results are also evaluated to prove the performance of the STR. In addition, the phase synchronization accuracy is also demonstrated to verify the effectiveness of the non-interrupted synchronization scheme. The standard deviation (STD) of the residual phase is less than 0.3 degrees. The results have guiding significance for the synchronization unit design of LuTan-1 and the future BiSAR system.

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A 260-mW Ku-Band FMCW Transceiver for Synthetic Aperture Radar Sensor With 1.48-GHz Bandwidth in 65-nm CMOS Technology

Cited by 40 publications

References 39 publications

A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

An Image Rejection Ku-Band CMOS Low Noise Amplifier With Bridged-Tee Band-Stop Filter

The Synchronization Transceiver Design and Experimental Verification for the LuTan-1 SAR Satellite

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