A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

Abstract

This paper presents a K u -band RF receiver front-end with broadband impedance matching and amplification. The major building blocks of the proposed receiver front-end include a wideband low-noise amplifier (LNA) employing a cascade of resistive feedback inverter (RFI) and transformer-loaded common source amplifier, a down-conversion mixer with push–pull transconductor and complementary LO switching stage, and an output buffer. Push–pull architecture is employed extensively to maximize the power efficiency, bandwidth, and linearity. The proposed two-stage LNA employs the stagger-tuned frequency response in order to extend the RF bandwidth coverage. The input impedance of RFI is carefully analyzed, and a wideband input matching circuit incorporating only a single inductor is presented along with useful equivalent impedance matching models and detailed design analysis. The prototype chip was fabricated in 45-nm CMOS technology and dissipates 78 mW from a 1.2-V supply while occupying chip area of 0.29 mm 2 . The proposed receiver front-end provides 21 dB conversion gain with 7 GHz IF bandwidth, 3.5 dB NF, −15.7 dBm IIP 3 while satisfying <−10 dB input matching over the whole input band.

Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks

“…As the first active component of the RF front-end, the properties of the LNA, especially bandwidth, noise and linearity, will directly affect the performance of the receiver [4,5]. In response to various RF applications, wideband LNAs handle multiple operating frequencies within a limited chip area, which greatly improves the integration of the RF front-end and plays an important role in many applications such as mobile communications, CATV, satellite navigation, and so on [6][7][8].…”