A 26 dBm output power SiGe power amplifier for mobile 16 QAM LTE applications

Lee, Geunyong; Jung, Jong Hyun; Song, Jong−In

doi:10.1109/rws.2013.6486698

Cited by 7 publications

References 6 publications

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A 2.1 GHz 30 dBm power amplifier in 0.18 μm SiGe BiCMOS process

Zhu

et al. 2018

Micro & Optical Tech Letters

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lower and higher resonant frequencies, respectively, with unidirectional radiation pattern and good FTBR, which makes the antenna suitable for a low cost X-band wireless applications.ORCID Sourav Nandi http://orcid.org/0000-0001-7235-5757 Akhilesh Mohan http://orcid.org/Abstract A cascode power amplifier (PA) fabricated in 0.18 lm SiGe BiCMOS technology is presented. The cascode structure is used to provide high voltage gain and high output power. To prevent the negative impact of bond wire, the pseudo-differential structure is used to provide a virtual ground for signal. Adaptive bias circuit provides stable voltage bias to the base of common-emitter. With the combination of two completely symmetrical PA units, the whole PA achieves its saturated output power of 30.62 dBm and PAE of 31.75% at 2.1 GHz, and the small signal gain is 26.19 dB. K E Y W O R D Scascode, power amplifier, power combination, pseudo-differential structure, SiGe BiCMOS | I NTRO DUC TI ONRecently, with the rapid development of smart phone and wireless network, the RF power amplifier (PA) technology is playing an important role in the performance characteristic like high linearity, long transmission distance, and high efficiency. As the core module of the RF frontend, PA part decides the overall performance in good or bad condition. Generally, GaAs\InP and other III-V family materials are used to meet the needs of high breakdown voltage and high 834 |

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