A 25-to-28 Gb/s High-Sensitivity (&lt;formula formulatype="inline"&gt; &lt;tex Notation="TeX"&gt;$-$&lt;/tex&gt;&lt;/formula&gt;9.7 dBm) 65 nm CMOS Optical Receiver for Board-to-Board Interconnects

Tokuda, Takashi; Yamashita, Hiroyuki; Yazaki, Toru; Chujo, Norio; Lee, Yong; Matsuoka, Y.

doi:10.1109/jssc.2014.2349976

Cited by 64 publications

(15 citation statements)

References 15 publications

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“…In this case, the structure of the PICs should be a back-illumination type for proper fiber coupling. With this configuration, the work in [ 54 ] presents a 4 × 28-Gb/s optical receiver exhibiting good sensitivity.…”

Section: Silicon Photonics For High-speed Data Communicationsmentioning

confidence: 99%

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Review of CMOS Integrated Circuit Technologies for High-Speed Photo-Detection

Jeong

Bae

Jeong

2017

Sensors

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The bandwidth requirement of wireline communications has increased exponentially because of the ever-increasing demand for data centers and high-performance computing systems. However, it becomes difficult to satisfy the requirement with legacy electrical links which suffer from frequency-dependent losses due to skin effects, dielectric losses, channel reflections, and crosstalk, resulting in a severe bandwidth limitation. In order to overcome this challenge, it is necessary to introduce optical communication technology, which has been mainly used for long-reach communications, such as long-haul networks and metropolitan area networks, to the medium- and short-reach communication systems. However, there still remain important issues to be resolved to facilitate the adoption of the optical technologies. The most critical challenges are the energy efficiency and the cost competitiveness as compared to the legacy copper-based electrical communications. One possible solution is silicon photonics which has long been investigated by a number of research groups. Despite inherent incompatibility of silicon with the photonic world, silicon photonics is promising and is the only solution that can leverage the mature complementary metal-oxide-semiconductor (CMOS) technologies. Silicon photonics can be utilized in not only wireline communications but also countless sensor applications. This paper introduces a brief review of silicon photonics first and subsequently describes the history, overview, and categorization of the CMOS IC technology for high-speed photo-detection without enumerating the complex circuital expressions and terminologies.

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Section: Silicon Photonics For High-speed Data Communicationsmentioning

confidence: 99%

“…The bandwidth of the RGC TIA can be further enhanced by combining a shunt-shunt feedback [ 72 ] and a differential RGC TIA can also be configured [ 73 ]. Recently, RGC-based TIAs have been successfully demonstrated with operating speed higher than 25 Gb/s [ 54 , 56 , 74 ].…”

Section: Cmos Transimpedance Amplifier (Tia)mentioning

confidence: 99%

Review of CMOS Integrated Circuit Technologies for High-Speed Photo-Detection

Jeong

Bae

Jeong

2017

Sensors

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“…For high-speed TIA, achieving maximum bit rates requires a flat response of the magnitude of the transimpedance within the frequency range of interest. The use of networks, such as T-coil peaking, shunt-series peaking, shunt-peaking, and π-type peaking, have been reported to increase the bandwidth and remove the passband ripple [15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30]. However, the bondwire inductance and the parasitic capacitance of the PD vary from chip to chip in engineering applications; thus, the TIA should be designed to be robust to these variations.…”

Section: Introductionmentioning

confidence: 99%

A 25-Gb/s high-sensitivity transimpedance amplifier with bandwidth enhancement

Luo

Chen³

et al. 2020

IEICE Electron. Express

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“…Accordingly, data traffic in a data center is explosively growing [3,4], and the power consumption is also increasing due to a large number of pieces of communication equipment [5,6,7]. In the optical communication systems, a transimpedance amplifier (TIA) [8], which converts currents of a photodiode to voltage signals and amplifies it to drive following circuits, is the most essential circuit for the frequency bandwidth of the optical receiver [9,10,11], but to achieve high-performance transimpedance, TIAs require large power consumption [12]. A low power TIA is also being actively investigated [13,14].…”

Section: Introductionmentioning

confidence: 99%

A wideband current-reuse-RGC TIA circuit with low-power consumption

Hida

Nakane

Mizuno

et al. 2019

IEICE Electron. Express

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This paper presents a new Gain-Adder (GA) circuit for Current-Reuse (CR)-RGC TIA. The proposed GA circuit employs one transistor alone to enhance bandwidth and decrease power consumption. The proposed CR-RGC TIA circuit is designed in a 65-nm CMOS technology. The simulation results confirmed that the proposed CR-RGC TIA circuit improves bandwidth by 83% and decreases the power consumption by 34% in comparison with the conventional one.

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A 25-to-28 Gb/s High-Sensitivity (<formula formulatype="inline"> <tex Notation="TeX">$-$</tex></formula>9.7 dBm) 65 nm CMOS Optical Receiver for Board-to-Board Interconnects

Cited by 64 publications

References 15 publications

Review of CMOS Integrated Circuit Technologies for High-Speed Photo-Detection

Review of CMOS Integrated Circuit Technologies for High-Speed Photo-Detection

A 25-Gb/s high-sensitivity transimpedance amplifier with bandwidth enhancement

A wideband current-reuse-RGC TIA circuit with low-power consumption

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