A 25–35 GHz Neutralized Continuous Class-F CMOS Power Amplifier for 5G Mobile Communications Achieving 26% Modulation PAE at 1.5 Gb/s and 46.4% Peak PAE

Ali, Sheikh Nijam; Agarwal, Pawan; Gopal, Srinivasan; Mirabbasi, Shahriar; Heo, Deukhyoun

doi:10.1109/tcsi.2018.2860019

Cited by 41 publications

(6 citation statements)

References 34 publications

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“…class-E, class-F). Papers (Ali et al, 2019;Li & Wang, 2018;Hamed et al, 2018) propose mm-wave DPAs although nanometer CMOS processes (ex. 45 nm, 28 nm) are utilized.…”

Section: Millimeter Wave Radio Frequency Power Amplifiermentioning

confidence: 99%

Mid-band 5G wireless network power amplifier research

Vasjanov¹

2019

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Vilnius 2019 Disertacija rengta 2015-2019 metais Vilniaus Gedimino technikos universitete. Vadovas doc. dr. Vaidotas BARZDĖNAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001). Vilniaus Gedimino technikos universiteto Elektros ir elektronikos inžinerijos mokslo krypties disertacijos gynimo taryba: Pirmininkas prof. habil. dr. Romualdas NAVICKAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001). Nariai: dr. Alvydas LISAUSKAS (Lenkijos mokslų akademijos Aukšto slėgio fizikos institutas, fizika-N 002), doc. dr. Vitalij NOVICKIJ (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001), prof. dr. Šarūnas PAULIKAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001), prof. dr. Algimantas VALINEVIČIUS (Kauno technologijos universitetas, elektros ir elektronikos inžinerija-T 001). Disertacija bus ginama viešame Elektros ir elektronikos inžinerijos mokslo krypties disertacijos gynimo tarybos posėdyje 2019 m. birželio 13 d. 10 val. Vilniaus Gedimino technikos universiteto senato posėdžių salėje.

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“…class-E, class-F). Papers (Ali et al, 2019;Li & Wang, 2018;Hamed et al, 2018) propose mm-wave DPAs although nanometer CMOS processes (ex. 45 nm, 28 nm) are utilized.…”

Section: Millimeter Wave Radio Frequency Power Amplifiermentioning

confidence: 99%

Mid-band 5G wireless network power amplifier research

Vasjanov¹

2019

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“…The published papers related to mm-wave PA research reveal an overall tendency of architectures which are used in frequency ranges above 25 GHz. Papers [63][64][65] present detailed mm-wave CMOS PA reviews distinguishing architecture types alongside their research results. According to the review tables in the latter papers, advanced PA architectures, such as DPA, ET/EER PA, TWA or outphasing PA, are rarely implemented at frequencies above 25 GHz in CMOS process node.…”

Section: Millimeter Wave Rf Pamentioning

confidence: 99%

A Review of Advanced CMOS RF Power Amplifier Architecture Trends for Low Power 5G Wireless Networks

Vasjanov

Barzdėnas

2018

Electronics

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The structure of the modern wireless network evolves rapidly and maturing 4G networks pave the way to next generation 5G communication. A tendency of shifting from traditional high-power tower-mounted base stations towards heterogeneous elements can be spotted, which is mainly caused by the increase of annual wireless users and devices connected to the network. The radio frequency (RF) power amplifier (PA) performance directly affects the efficiency of any transmitter, therefore, the emerging 5G cellular network requires new PA architectures with improved efficiency without sacrificing linearity. A review of the most promising reported RF PA architectures is presented in this article, emphasizing advantages, disadvantages and concluding with a quantitative comparison. The main scope of reviewed papers are PAs implemented in scalable complementary metal–oxide–semiconductor (CMOS) and SiGe BiCMOS processes with output powers suitable for portable wireless devices under 32 dBm (1.5 W) in the low- and high- 5G network frequency ranges.

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“…The amplifier was operating at 2.2 V and delivered 40.7% PAE along with a gain of 10.3 dB and an output power of 17.1 dBm. Very recently, a 65 nm CMOS single-transistor Class-F power amplifier operable at 5G-millimeter-wave frequencies was reported in [7]. The 1.1 V driven power amplifier rendered 46.4% peak PAE, a power gain of 10 dB along with an output power of around 14.75 dBm.…”

Section: Introductionmentioning

confidence: 99%

“…The proposed design employs a "parasitic-aware" Class-F −1 harmonic control network connected at the drain terminal of the NMOS device. There are several Class-F −1 circuit topologies based on the LC network [6][7][8][9][10]; however, the proposed Class-F −1 LC-network is a new topology deduced using a novel iterative algorithm. A dual-purpose output matching network is incorporated in the design, which reinforces the waveform-shaping capability of the Class-F −1 harmonic network along with performing the typical task of output impedance matching.…”

Section: Introductionmentioning

confidence: 99%

A 6 GHz Integrated High-Efficiency Class-F−1 Power Amplifier in 65 nm CMOS Achieving 47.8% Peak PAE

Ali

Hasan

2021

Electronics

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This paper reports a “single-transistor” Class-F−1 power amplifier (PA) in 65 nm CMOS, which operates at the microwave center frequency of 6 GHz. The PA is loaded with a Class-F−1 harmonic control network, employing a new “parasitic-aware” topology deduced using a novel iterative algorithm. A dual-purpose output matching network is designed, which not only serves the purpose of output impedance matching, but also reinforces the harmonic control of the Class-F−1 harmonic network. This proposed PA yields a peak power-added efficiency (PAE) of 47.8%, which is one of the highest when compared to previously reported integrated microwave/millimeter-wave PAs in CMOS and SiGe technologies. The amplifier shows a saturated output power of 14.4 dBm along with an overall gain of 13.8 dB.

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A 25–35 GHz Neutralized Continuous Class-F CMOS Power Amplifier for 5G Mobile Communications Achieving 26% Modulation PAE at 1.5 Gb/s and 46.4% Peak PAE

Cited by 41 publications

References 34 publications

Mid-band 5G wireless network power amplifier research

Mid-band 5G wireless network power amplifier research

A Review of Advanced CMOS RF Power Amplifier Architecture Trends for Low Power 5G Wireless Networks

A 6 GHz Integrated High-Efficiency Class-F−1 Power Amplifier in 65 nm CMOS Achieving 47.8% Peak PAE

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