A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology

Stoppel

Schukfeh

et al. 2016

Phys. Status Solidi A

Self Cite

We present a wafer-level heterointegrated indium phosphide double heterobipolar transistor on silicon germanium bipolarcomplementary metal oxide semiconductor (InP DHBT on SiGe BiCMOS) process which relies on adhesive wafer bonding. Subcircuits are co-designed in both technologies, SiGe BiCMOS and InP DHBT, with more than 300 GHz bandwidth microstrip interconnects. The 250 nm SiGe HBTs offer cutoff frequencies around 200 GHz, the 800 nm InP DHBTs exceed 350 GHz. Heterointegrated signal sources are demonstrated including a 328 GHz quadrupling source with −12 dBm RF output power. A common design kit for full InP DHBT/SiGe BiCMOS co-design was set up. The technology is being opened to third-party customers through IHP's multi-purpose wafer foundry interface. Microphotograph of InP DHBT / SiGe BiCMOS wafer

Section: Measured Results and Outlookmentioning

confidence: 99%

SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications

Stoppel

Schukfeh

et al. 2016

Phys. Status Solidi A

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“…Particular attention has been put on increasing the Q-factor of the tank in order to minimize phase noise. In the mm-wave range the Q factor is primarily limited by the varactor and hence series-connected MOS varactors with small resistance are employed in the circuit.The VCO is followed by a single-stage buffer in cascode topology offering good isolation and matching [7].…”

Section: Circuit Designmentioning

confidence: 99%

A 330 GHz hetero-integrated source in InP-on-BiCMOS technology

Hossain

2015 IEEE MTT-S International Microwave Symposium

Lisker

et al. 2015

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This paper presents a 330 GHz hetero integrated signal source using InP-on-BiCMOS technology. It consists of a fundamental Voltage Controlled Oscillator (VCO) in 0.25 ,.. m BiCMOS technology and a frequency quadrupler in 0.8 ,.. m transferred substrate (TS) InP-HBT technology, which is integrated on top of the BiCMOS MMIC in a wafer-level BCB bonding process. The fundamental VCO operates at 82 GHz and the combined source delivers -12 dBm output power at 328 GHz. To the knowledge of the authors, this is the first hetero-integrated signal source in the frequency range beyond 300 GHz reported so far. It demonstrates the potential of the hetero-integration process for THz frequencies. Index Terms -InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC) oscillator, millimeter wave (mm-wave) source, terahertz, transferred-substrate process (TS).

“…In the mm-wave range the Q- factor is primarily limited by the varactor and hence series-connected differential metal-oxide-semiconductor varactors with small resistance are employed in the circuit. The VCO is followed by a single-stage buffer in cascode topology offering good isolation and matching [7]. Single-ended output is taken from one port of the differential buffer.…”

Section: Circuit Designmentioning

confidence: 99%

“…In this paper, a detailed study of a 248 GHz hetero-integrated source (extended work of [7]) in InP-on-BiCMOS technology is presented, where an 82.7 GHz fundamental frequency voltage controlled oscillator (VCO) in BiCMOS technology is employed to drive a 248 GHz frequency tripler in transferred-substrate (TS) InP-double heterojunction bipolar transistor (DHBT) technology. Both InP-DHBT and SiGe-BiCMOS technologies are wafer-level integrated using a benzocyclobutene (BCB) bonding process [8].…”

Section: Introductionmentioning

confidence: 99%

Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technology

Hossain

Ostermay

Int. J. Microw. Wireless Technol.

et al. 2015

Self Cite

This paper presents the performance study of a 248 GHz voltage-controlled hetero-integrated signal source using indium phosphide (InP)-on-bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The source consists of a voltage controlled oscillator (VCO) in 0.25 µm BiCMOS technology and a frequency multiplier in 0.8 µm transferred-substrate InP-heterojunction bipolar transistor technology, which is integrated on top of the BiCMOS monolithic microwave integrated circuit in a wafer-level based benzocyclobutene bonding process. The vertical transitions from BiCMOS to InP in this process exhibit broadband properties with insertion losses below 0.5 dB up to 325 GHz. The VCO operates at 82.7 GHz with an output power of 6 dBm and the combined circuit delivers −9 dBm at 248 GHz with 1.22% tuning range. The phase noise of the combined circuit is −85 dBc/Hz at 1 MHz offset. The measured output return loss of the hetero-integrated source is >10 dB within a broad frequency range. This result shows the potential of the hetero integrated process for THz frequencies.