A 23-dBm 60-GHz Distributed Active Transformer in a Silicon Process Technology

This paper presents a 60 GHz differential singlestage power amplifier IC with extrapolated 24.5 dBm output power and 12.9 % power added efficiency at 1 dB compression. The circuit is based on distributed amplification with four parallel cascode stages and power combination with a transformer. It shows a 3 dB gain bandwidth of 12 GHz from 51 GHz to 63 GHz with maximum power gain of 12.3 dB at 58 GHz. It consumes 600 mA from a 3.3 V supply and was fabricated in a 250 nm SiGe BiCMOS technology with peak fT and fmax of 180 GHz and 220 GHz, respectively. The high linearity of the circuit exceeds the capabilities of the available measurement instrumentation. A maximum output power of 16.5 dBm has been observed; extrapolation from the measured data and matching simulated performance allow predicting an output power of 24.5 dBm at 1 dB compression. This value, to the best knowledge of the authors, would be the highest reported to date for 60 GHz silicon power amplifiers.

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“…Finally large bandwidth could be provided with fairly simple (1) [4] 90 nm (4) 20. 6 8 18.2 19.9 14.2 (1) [5] 130 nm (5) 18 n.a.…”

Section: Discussionmentioning

confidence: 99%

“…This makes the design of power amplifiers particularly critical. The distributed active transformer power amplifier (DAT-PA) [1] is particularly suited for delivering high-power at high frequencies. First, it distributes the current density across multiple parallel stages, thus reducing the required width of feed lines.…”

Section: Introductionmentioning

confidence: 99%

A 60 GHz 24.5 dBm wideband distributed active transformer power amplifier on 250 nm BiCMOS

Leufker

Carta

Ellinger

2015

2015 German Microwave Conference

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“…Due to the low breakdown voltage of the CMOS process, an 8-way distributed transformer as shown in Figure 4 was used for power combining and output impedance matching [4]. The primary winding of the transformer consists of four segments with identical shape, and the secondary winding of the transformer is realized by a metal lines.…”

Section: B Distributed Transformer Techniquementioning

confidence: 99%

Development of millimeter-wave power amplifier using CMOS process

Zhao

Chen

Kang

2015

2015 Asia-Pacific Microwave Conference (APMC)

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This paper summarizes the developments of millimeter-wave (mmW) CMOS power amplifiers (PAs) at University of Electronic Science and Technology of China in recent years. Harmonic control technology and inverse Class F technique are used to improve the power added efficiency (PAE) for mmW CMOS PAs effectively. Moreover, by realizing symmetrical voltage coupling between transformer primaries and secondary loops, mmW CMOS PA with good output power has been successfully developed.

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“…Currently, transformers are popular in MMW PA design [64,72,81,84] since dc voltage can be fed to the transistors via this transformer, bypass capacitors or RF chokes can be eliminated as well as RF grounding can be achieved with the virtual ground. By using transformer combing, a large number of on-chip components are eliminated.…”

Section: Power Amplifier (Pa)mentioning

confidence: 99%

“…The main insight is that a fully-integrated on-chip RMS power detector for automatic level control (ALC), build-in self-test and voltage standing wave ratio (VSWR) protection incorporate with the PA to improve the performances. In [84], the distributed active transformer, which is realized with tacked coupled wires as opposed to slab inductors, performs a high coupling coefficient of 0.8 at 60 GHz. The possibility of efficient power combining and impedance transformation for the operation in MMW frequencies is exemplified.…”

Section: Pa In Cmos Technologymentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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A 23-dBm 60-GHz Distributed Active Transformer in a Silicon Process Technology

Cited by 91 publications

References 28 publications

A 60 GHz 24.5 dBm wideband distributed active transformer power amplifier on 250 nm BiCMOS

A 60 GHz 24.5 dBm wideband distributed active transformer power amplifier on 250 nm BiCMOS

Development of millimeter-wave power amplifier using CMOS process

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

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