A 22nm FDSOI Technology Optimized for RF/mmWave Applications

2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)

Tervo

et al. 2019

This paper presents a fully integrated, threestack power amplifier for 5G wireless systems, designed and fabricated using 22 nm CMOS FDSOI technology. The frequency of operation is from 25 GHz to 30.5 GHz, with a maximum 3 dB bandwidth of 5.5 GHz and a maximum gain of 9.9 dB. Maximum RF output power, power-added efficiency (PAE) and output 1 dB compression point are 18.8 dBm, 23.4 % and 14.9 dBm, respectively, achieved at 28.5 GHz.

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ka-Band 3-Stack Power Amplifier with 18.8 dBm P_sat and 23.4 % PAE Using 22nm CMOS FDSOI Technology

Aikio

2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)

Tervo

et al. 2019

“…Specific attention should be paid to low loss TX-RX switch that is a key element in the front-end. 22nm Fully Depleted Silicon-on-Insulator (FDSOI) technology is suitable solution for mmW integration with possibility to combine digital processing with high performance active and passive RF circuitry [1]. In addition, stacked PA structures favored in SOI based technologies allow higher power via higher supply voltages, but on the other hand can easily stress front-end switch beyond acceptable limits [2], [3].…”

Section: Introductionmentioning

confidence: 99%

Ka-Band TDD Front-End with Gate Shunt Switched Cascode LNA and Three-Stack PA on 22nm FDSOI CMOS Technology

2020 50th European Microwave Conference (EuMC)

Rusanen

Aikio

et al. 2021

TDD Ka-band front-end with integrated switch on 22nm FDSOI CMOS technology is implemented for 5G NR at 24-28 GHz bands. Shunt switch technique reduces front-end performance only by 2 dB at 24 GHz compared to stand-alone reference amplifiers. Output power of TX with stacked PA is 13.6 dBm with 15 dB of peak gain, and RX front-end has 5dB noise figure at 24 GHz, both measured at the antenna port. Maximum average channel power at 28 GHz was 4.8 dBm with 100 MHz 64-QAM OFDM signal within 5G ACPR and EVM specifications. The PA and LNA amplifiers dissipate 183 mW and 4.6 mW from 2.8V and 0.8V supplies, respectively, occupying only 0.19mm 2 .

“…In this paper we describe a fully integrated three-stack power amplifier (PA) at Ka-band using GLOBALFOUNDRIES 22 nm CMOS fully depleted silicon on insulator (FDSOI) technology [2]. It will be shown that by utilizing back-gate bias it is possible to affect the linearity and available output power of the proposed PA.…”

Section: Introductionmentioning

confidence: 99%

Ka-Band Stacked Power Amplifier on 22 nm CMOS FDSOI Technology Utilizing Back-Gate Bias for Linearity Improvement

Rusanen

2019 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)

Sethi

et al. 2019

This paper presents a method for extending millimeter wave power amplifier (PA) linear range by fine tuning the CMOS SOI device output characteristics via back-gate biasing. The effect of back-gate biasing to PA performance is measured and reported. It is demonstrated how implementing the same bias point with different back-gate values affects the linear range of the fabricated PA. By applying positive back-bias to the NFET devices, the measured PA displays minimum AM-PM and reaches maximum output power, PAE and 1 dB compression point of 16.3 dBm, 23 % and 13.9 dBm, respectively. EVM of 6.8 % and ACLR of −29.3 dBC were achieved at 5 dBm average output channel power with a 100 MHz 64-QAM OFDM signal.